| http://www.w3.org/ns/prov#value | - To obtain this semiconductor device, at first, as shown in FIG. 3A, field oxide film 102 is formed on a silicon substrate 101 by selective oxidation method using a known method such as dry etching, and then a diffusion layer 103 of a conductive type reverse to that of the silicon substrate 101 is formed by ion-implanting the silicon substrate 101 between the field oxide films 102.
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