| http://www.w3.org/ns/prov#value | - The requirements described above are in large part addressed by a process employing an oxide layer formed from tetraethyl orthosilicate (TEOS), a silicon oxynitride (SiON) etch stop layer, and a bake of the SiON layer before deposition of the TEOS. A transistor, including a gate dielectric, gate conductor, and source and drain regions, may be fabricated on a semiconductor substrate.
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