| http://www.w3.org/ns/prov#value | - In an embodiment of the present invention, the gate dielectric is a deposited oxide deposited by a conformal process, such as CVD or ALD. The gate dielectric layer can comprise a high k insulating film selected from the group consisting of tantalum oxide, titanium oxide, hafnium oxide, zirconium oxide, PZT, BST, aluminum oxide, and silicate thereof.
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