About: http://webisa.webdatacommons.org/91712062

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	First, referring to FIG. 6(a), a gate oxide 402 having a film thickness of 4 to 30 nm for example is formed on the surface of the P-type silicon substrate 401 by means of a thermal oxidation method.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com