About: http://webisa.webdatacommons.org/98233900

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The gate dielectric may be formed from a material such as silicon dioxide or silicon oxynitride with a thickness ranging from about 3 angstroms to about 100 angstroms, preferably about 10 angstroms or less.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com