| http://www.w3.org/ns/prov#value | - The memory device 118 may be an integrated semiconductor device, which may include one or more of the following components on a single body (e.g., a single crystal or polycrystalline body) of a semiconducting material, such as silicon, gallium-arsenide, or indium phosphide: the built-in, self-test module 120; the column decoder 118; the quantizing circuitry 16; and the data locations 64.
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