| http://www.w3.org/ns/prov#value | - tal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal...http://www.google.com/patents/US6784508?utm_source=gb-gplus-sharePatent US6784508 - Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofAdvanced Patent SearchPublication numberUS6784
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