About: http://webisa.webdatacommons.org/181869245

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	A sidewall spacer 46 can be formed adjacent to the edges of gate electrode 36 by depositing and anisotropically etching and insulating material, such as silicon dioxide or silicon nitride.
http://www.w3.org/ns/prov#wasQuotedFrom	google.fr