About: http://webisa.webdatacommons.org/242682324

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In FIGS. 7B, 8B and 9B, a gate insulating layer 120 is formed on the gate line 113, the gate electrode 115 and the gate pad 117 by depositing an inorganic insulating material, such as silicon oxide (SiO2) and silicon nitride (SiNx).
http://www.w3.org/ns/prov#wasQuotedFrom	google.com