| http://www.w3.org/ns/prov#value | - Like this, since the present invention is a technique relating to a contact structure among wiring lines, the invention can be applied to both a TFT and a MOSFET. Moreover, it is effective to apply the present invention to not only a semiconductor device, such as a TFT or a MOSFET, but also to a case which requires a structure for electrically connecting an aluminum wiring line protected by an ano
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