| http://www.w3.org/ns/prov#value | - In a chemical vapor deposition process for deposition of in-situ n-doped silicon on a substrate at a temperature less than 750??? C. wherein the base pressure in the reaction zone where deposition occurs is less than about 10-8 torr, the improvement including introducing Ge into said deposited silicon during the incorporation of a n-type dopant species into said silicon, the amount of Ge incorpora
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