| http://www.w3.org/ns/prov#value | - In the method of manufacturing an organic field effect transistor according to the present invention, examples of the material constituting the gate insulation layer include not only inorganic insulating materials such as silicon oxide based materials, silicon nitride (SiNY), Al2O3, and metal oxide highly dielectric insulating materials but also organic insulating materials such as polymethyl meth
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