| http://www.w3.org/ns/prov#value | - In accordance with a third embodiment, there is provided a method of fabricating a semiconductor device comprising the steps of forming, by patterning, a capacitor structure of a capacitor electrode and a capacitor insulation film and forming the silicon-based insulation film including oxygen, by a high density plasma CVD method, on the entire surface of the substrate including the capacitor struc
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