PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • In one particular process, the isolation trenches 42 shown in FIGS. 3, 4, 6 and 7 may be formed by known reactive ion etching techniques in the silicon substrate 26 first and filled with an insulating material such as silicon dioxide.
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