| http://www.w3.org/ns/prov#value | - ???Process??? as used herein is broadly defined and includes the use of the line image formed by the disclosed apparatus and method to treat the substrate such as by annealing source, drain, or gate regions of an integrated circuit or device, to form silicide regions in integrated devices or circuits to lower contact resistances of metal wiring coupled thereto, or to trigger a chemical reaction to
|
