| http://www.w3.org/ns/prov#value | - Therefore, a study on the use of a high dielectric material such as Ta2O5, TiO2, Al2O3 or HfO2 having a higher dielectric constant than such materials as silicon oxide (SiO2), silicon nitride (Si3N4) and nitrogen oxide (NO) used as a dielectric layer of a capacitor has actively proceeded in an attempt to obtain a sufficient capacitance required by the large-scale of integration of the semiconducto
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