| http://www.w3.org/ns/prov#value | - The effects resulting from the structure of FIG. 1B are similar to those obtained in the case of the structure in FIG. 1A. In other words, because a channel formation region of the transistor 262 is provided over a highly flat region, a problem such as a short channel effect can be prevented even under a situation where the transistor 262 is miniaturized; accordingly, the transistor 262 having fav
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