| http://www.w3.org/ns/prov#value | - This invention relates to a total reflection of X-ray fluorescence analyzing system, and more particularly to a system for allowing an X-ray to be incident below an angle of total reflection onto, e.g., a silicon (Si) wafer surface to measure a quantity of an excited fluorescent X-rays generated from metal impurity such as chrominum (Cr), iron (Fe), nickel (Ni), copper (Cu), aluminum (Al), or zinc
|
