| http://www.w3.org/ns/prov#value | - Thereafter, the gate insulating film made of silicon nitride SiNx or the like is formed. [0298] As shown in FIG. 50, circular patterns of two sizes (gate metal layer), i.e., circular patterns 71 and circular patterns 72 smaller than the circular patterns 71 are provided on the substrate 4. [0299] Then, a semiconductor layer such as a-Si is formed over the circular patterns 71 and the circular patt
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