| http://www.w3.org/ns/prov#value | - The tantalum deposition process may be performed under the following deposition conditions including supplying the tantalum precursor at a rate between about 1 sccm and about 100 sccm, such as between about 5 sccm and about 50 sccm, supplying the nitrogen free reductant at a rate between about 1 sccm and about 100 sccm, such as between about 5 sccm and about 50 sccm, supplying a carrier gas at a f
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