| http://www.w3.org/ns/prov#value | - The insulating film 13 can be formed by using a single layer structure of an insulating film at least having oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), a silicon oxide film containing nitrogen (SiOxNy film) (x>y) (x and y are positive integers), or a silicon nitride film containing oxygen (SiNxO
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