| http://www.w3.org/ns/prov#value | - Further, in the production method of the semiconductor thin films of the present invention, as materials of the substrate subjected to epitaxial growth of semiconductor thin films, not only semiconductor substrates such as Si, InP, GaP and CdTe but also metallurgical grade Si substrate, metal substrates such as ceramic substrate and SUS substrate, and dissimilar materials such as glass may be used
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