| http://www.w3.org/ns/prov#value | - Further, the memory device comprises: an n+ type storage region 311; an electrode 321 made with the same material as the electrode 324; an insulator region 316 formed with such a material as silicon oxide (SiO2), silicon nitride (Si3 N4) or aluminum oxide (Al2 O3), or a combination thereof; and a insulator region 317 formed with the same material as that of the insulator region 316, or an insulato
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