| http://www.w3.org/ns/prov#value | - Generally, the deposition process includes exposingthe substrate 308 to a silicon source, such as silane, chlorosilane, or dichlorosilane, and an oxygen-containing gas, such as O.sub.2 or N.sub.2O in a deposition chamber at a pressure of from about 50 mT to about 1000 mT, for a period of from about 10minutes to about 120 minutes while maintaining the substrate at a temperature of from about 650.de
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