| http://www.w3.org/ns/prov#value | - r 2k+1 according to a write data item input from an external device and a data item held in the memory cell, or a semiconductor memory device comprising: n-value memory cells (n is 4 or a greater natural number), each having a first threshold voltage to store 1, a second threshold voltage to store 2,a third threshold voltage to store 3, and an i-th threshold voltage to store i (i is a n
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