| http://www.w3.org/ns/prov#value | - Patent US6717226 - Hafnium oxide and zirconium oxide; noncontamination - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsA transistor device has a gate dielectric with at least two layers in which one is hafnium oxide and the other is a metal oxide different from hafnium oxide.
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