| http://www.w3.org/ns/prov#value | - g a gas mixture ratio of carbon fluoride gas/inert gas in the range between about 10%/90% to 90%/10%, placing the semiconductor wafer in a plasma generated by the system including a high volume of fluorine radicals, F*, etching a surface of the semiconductor wafer with the application of the flourine radicals, F*, to the surface, and buffering the application of generated radicals, F*, applied to
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