| http://www.w3.org/ns/prov#value | - BACKGROUND OF THE INVENTION [0001] The present invention relates in general to semiconductor devices and, more particularly, to providing a low cost, high channel density, trench gate transistor. [0002] Trench power metal oxide semiconductor field effect transistor (MOSFET) devices are used in many applications including power supplies, battery chargers, computers, and cell phones.
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