| http://www.w3.org/ns/prov#value | - The process 100 continues at step 110 with the formation of a dielectric layer 210 over the metal layer 205 as shown in FIG. 11C. The dielectric layer 210 may comprise insulating materials such as amorphous silicon nitride (SiNx), silicon oxynitride, nitrogen doped silicon oxide and/or another dielectric material.
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