| http://www.w3.org/ns/prov#value | - 4, and, ohmic contact layers 55 and 56 made of material such as silicide or n+ hydrogenated amorphous silicon doped with high-concentrated n type impurity, are formed on the semiconductor layer 40. [0053] A data wire 62, 65, 66 and 68 made of Mo or MoW alloy are formed on the ohmic contact layers 55 and 56 and the gate insulating layer 30.
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