| http://www.w3.org/ns/prov#value | - A conventional dopant such as B or BF2 is introduced into the Ni layer through a portion of the TiN layer disposed over the second gate G2 with spacers SP. The energies preferably are B: 0.3 KeV to 3 KeV, BF2: 2 KeV to 5 KeV, with doses of about 1E15#/cm2 to 5E15#/cm2.
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