| http://www.w3.org/ns/prov#value | - Alternatively, dielectric layer 46 may comprise other insulating materials, such as silicon oxide, silicon nitride, or silicon oxy-nitride, all or which can be CVD deposited across substrate 43. [0032] A patterned photoresist layer 49 exposing a portion of dielectric layer 46 is formed to act as an etch mask during the subsequent patterning of a contact opening.
|
