| http://www.w3.org/ns/prov#value | - After depositing the hard masking material, a photoresist can be spun-on over the hard masking material, with the photoresist then being patterned photolithographically to provide one or more openings through which the hard masking material can be etched (e.g. by an anisotropic dry etching step such as reactive ion etching with a CHF3 -based chemistry for a silicon nitride mask layer) down to the
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