Head noun: gatePostmodifier: insulate film
| Same concepts |
|---|
Broader concepts
| label | provenance | confidence |
|---|---|---|
| silicon oxide film | isap:179442807 | 0.572799 |
| active layer | isap:93984670 | 0.540380 |
| oxide film | isap:179442810 | 0.456843 |
| film | isap:179442805 | 0.433343 |
| substrate | isap:285489115 | 0.369505 |
| semiconductor | isap:41212092 | 0.307962 |
| semiconductor substrate | isap:285489119 | 0.279127 |
| therefore | isap:288417122 | 0.219100 |
| process | isap:5251854 | 0.199199 |
Narrower concepts
| label | provenance | confidence |
|---|---|---|
| silicon oxide film | isap:177736054 | 0.705558 |
| oxide film | isap:177736053 | 0.687464 |
| channel region | isap:488797271 | 0.516706 |
| layer | isap:199766175 | 0.302943 |
| film | isap:177736051 | 0.231772 |
| sinx | isap:174901428 | 0.160826 |
| semiconductor device | isap:489301412 | 0.150104 |