Premodifier: semiconductor
Head noun: device

Same concepts
http://dbpedia.org/resource/Semiconductor_device

Broader concepts

labelprovenanceconfidence
electrical deviceisap:3965902470.873341
active deviceisap:3965907300.807902
active electronic componentisap:4251139100.807813
liquid crystal display deviceisap:3965898850.802621
circuit deviceisap:3965905790.798230
microelectronic deviceisap:3965901720.796991
various deviceisap:3965905270.795011
moduleisap:3979153820.785492
vertical semiconductor deviceisap:3965923370.768991
various applicationisap:4531492110.750632
electronic apparatusisap:4217085590.746962
electro-optical deviceisap:3965899690.732548
semiconductor chipisap:4897789250.720073
electrical componentisap:4251138720.718247
display deviceisap:3965897640.715618
image sensorisap:3971505750.714870
memory moduleisap:3979154600.714284
deviceisap:3965896660.708910
memory deviceisap:3965898220.706557
type of electronic deviceisap:4915998850.706553
electronic deviceisap:3965896770.702868
dram deviceisap:3965910490.698348
electronic partisap:4902796460.695344
electronic componentisap:4251138420.682888
integrate circuitisap:4455960260.676125
metallization process for useisap:4391454900.665823
bond padisap:4055886100.663881
semiconductor materialisap:1001505110.657497
liquid crystal displayisap:4467420360.656791
dram memory circuitisap:4455961300.654135
other memory deviceisap:3965939080.650912
multi-chip moduleisap:3979153810.648992
itemisap:4909916150.646746
disadvantageisap:692139760.644177
specimenisap:1029972990.637365
applicationisap:4531490400.637091
cellular phoneisap:1173555760.635096
digital cameraisap:3926673190.633905
componentisap:4251138460.632479
semiconductor substrateisap:4252102620.630984
mannerisap:3848871800.626900
solar cellisap:4897710720.624361
mobile computerisap:1013070760.621294
video cameraisap:3926673160.611006
display panelisap:1174809650.609480
electronic equipmentisap:4202379070.609268
semiconductor device in generalisap:3965911860.605821
fig 18isap:4056452990.603066
view of a assemblyisap:4913049440.597972
problemisap:4397250600.597355
thin filmisap:4894402150.591196
ic chipisap:4897789200.589199
partisap:4902796520.585463
fieldisap:1158235470.584757
ic cardisap:4897015150.584191
electronic instrumentisap:210132380.576911
apparatusisap:4217085380.568045
semiconductor packageisap:4497906870.562900
heat sinkisap:4914302460.558568
circuitisap:4455960190.553528
circuit boardisap:1201436580.551971
programmable logic deviceisap:3965925180.546284
reliabilityisap:4531725640.544379
conditionisap:4237425580.543505
semiconductor deviceisap:3965896470.541362
heat dissipationisap:4534289090.539320
systemisap:3863855330.532826
structureisap:4248497920.532737
present inventionisap:4242114290.531565
semiconductor circuitisap:4455960490.527026
substrateisap:4252102580.527003
flash memory deviceisap:3965915280.525220
elementisap:4476602270.524128
objectisap:3907693860.508432
viceisap:4913068850.504478
embodiment of the inventionisap:182474770.501962
devicesisap:4413657970.491785
switchisap:3923144130.490895
microprocessorisap:4716021390.490336
semiconductor memory deviceisap:3965900110.487419
electrical elementisap:4476603350.476953
memory cardisap:4897015860.476608
optical semiconductor deviceisap:3965917400.473477
same substrateisap:4252102880.471675
typeisap:4915998090.466469
first semiconductorisap:227279460.462794
wiring substrateisap:4252102910.459477
panelisap:1174809730.455808
important processisap:4391455020.447866
lightisap:1232594870.447706
manufacturing processisap:4391454610.445283
random access memory dramisap:4896727860.437558
random access memory sramisap:4914005770.421997
workpieceisap:4255604170.417337
cathodeisap:4406956950.415111
portable telephoneisap:4247063790.414825
heatisap:4908968680.411291
productisap:4391880960.407884
perspective viewisap:4913049710.407118
thin film transistorisap:181610590.405715
waferisap:1219222610.405349
manufacturing methodisap:3852671060.402416
manufacturing method thereofisap:4455093370.395448
embodimentisap:182474230.394824
film transistorisap:181610650.392756
equipmentisap:4202378870.392676
processisap:4391454560.390907
semiconductor elementisap:4476603170.387051
flash memoryisap:3874892490.386965
computerisap:1013071430.382952
semiconductor memoryisap:3874891410.382228
methodisap:3852671000.379522
materialisap:1001504530.376578
fig 19isap:4056452580.363412
photodetectorisap:223852650.363147
mo transistorisap:181611010.361963
conventionallyisap:4713613890.360408
packageisap:4497906860.357356
semiconductorisap:227279080.355127
providedisap:1034272070.355083
transistorisap:181610570.351783
manufacturingisap:224520420.350104
chipisap:4897789120.348827
caseisap:4897028360.347888
memoryisap:3874891240.344164
advantageisap:4216441210.338399
dramisap:4896727810.337545
interestisap:1068448180.325687
layerisap:1195455780.320515
fabrication methodisap:3852671970.305311
elisap:5141652630.303239
thyristorisap:4220249570.302942
padisap:4055886160.301621
formisap:4894520810.301280
exampleisap:4463114760.299127
thusisap:4915378760.280246
lead frameisap:1211925550.279893
numberisap:3979542060.274469
sizeisap:4914271420.265481
displayisap:4467420470.264582
mosfetisap:3875401570.264407
prior artisap:4056354280.258792
artisap:4056353750.257713
igbtisap:4910074330.252895
productionisap:212547670.252890
filmisap:4894402160.251607
sameisap:4918040890.250802
thereforeisap:4239323110.245899
demandisap:3957129170.243752
cmoisap:4056336150.243190
temperatureisap:4523735710.242626
likeisap:4907128900.237213
ledisap:4056532740.232891
furtherisap:4478532260.231933
test equipmentisap:4202380850.229086
fabricationisap:4513838630.226395
test signalisap:3954663690.221856
aisap:4718042730.211473
howeverisap:4407880520.210803
moreoverisap:988745830.208409
effectisap:3849526260.206058
capacitorisap:4214884510.201285
manufactureisap:4508813890.199784
speedisap:1207268870.193311
referenceisap:4246052330.178736
diodeisap:1152237970.168419
gate insulate filmisap:4893014120.150104
inventionisap:4242114350.130561
testisap:4914534980.074505

Narrower concepts

labelprovenanceconfidence
semiconductor laserisap:1541427360.908400
optical sensorisap:3859154530.892821
semiconductor packageisap:2763992740.887702
large-scale integrate circuitisap:2709730220.880329
electro-optical deviceisap:3965908840.870464
thin-film transistorisap:2536198310.866502
integrate circuitisap:2709729050.861616
power mosfetisap:3988857880.857914
integrate circuit icisap:1083663470.851356
bipolar transistorisap:2536198160.850079
field-effect transistorisap:2536198330.844994
circuit boardisap:1598916610.837018
memory deviceisap:3965896800.834374
computer chipisap:3005090300.833069
laser diodeisap:1587998560.830592
interactive semiconductor deviceisap:3965912230.828784
solar cellisap:3051038200.827329
semiconductor memory deviceisap:3965898190.820897
photodiodeisap:2540260820.818862
other electronic deviceisap:3965940830.816172
mosfet metal oxide semiconductorisap:532870040.815473
semiconductor memoryisap:3945511860.812693
semiconductor waferisap:1584661530.812652
thin film integrate circuitisap:3074706450.808576
memory icisap:1083663790.806650
thin filmisap:3074706230.801696
non-volatile memory deviceisap:3965921410.800818
insulate gate bipolar transistorisap:3054980920.800636
optical deviceisap:3965937030.791926
metal oxide semiconductor fieldisap:1552200020.791659
semiconductor device 10isap:3965929700.785709
schottky diodeisap:1587998730.784609
dramisap:3088876470.783935
nmo deviceisap:3965926570.781827
logic circuitisap:2709729190.779338
multilevel interconnectionisap:1083511700.779014
light-emitting deviceisap:3965901430.774629
flash memoryisap:3945511930.770422
semiconductor device 1isap:3965910080.769940
interlayer insulation filmisap:3074706760.768731
silicon waferisap:1584661570.768443
information processing apparatusisap:1323491820.767793
image pickup deviceisap:3965922080.764033
semiconductor integrate circuitisap:532869710.762341
diode ledisap:2102628540.761079
thin film transistor tftisap:2103199960.760849
integrate circuit icsisap:2094409120.759027
memory cellisap:3051038240.758016
thin film transistor hereinafterisap:1431664500.756190
schottky barrier diodeisap:1587999060.754108
cmo deviceisap:3965905810.751102
mos field effect transistorisap:2536201230.748839
nmo transistorisap:2536200820.748747
tftisap:2103199930.747821
metal contactisap:2703152400.746797
field effect transistor hereinafterisap:1431664520.744589
memory arrayisap:1570015230.744462
liquid crystalisap:2688014890.743871
dram dynamic random accessisap:3944906510.743245
flip-flop circuitisap:2709730090.742472
memoryisap:3945511620.741341
contact padisap:2151178400.739738
mosfet transistorisap:2536199330.738989
pn junctionisap:4810113400.737491
electronic componentisap:1322709790.737035
electronic elementisap:2731046970.736878
diffusion layerisap:1599581480.736462
chipisap:3005090220.736279
random access memory sramisap:3010233940.736127
cellular phoneisap:1624590700.735191
mos transistorisap:2536198650.734160
control circuitisap:2709729670.733602
embedded dramisap:3088877170.733254
gallium arsenideisap:4840299100.732604
mem deviceisap:3965928430.731745
light-emitting diodeisap:1587998680.730568
cmo transistorisap:2536200430.730458
soi substrateisap:1322511030.729372
phase change memoryisap:3945513740.727724
memory unitisap:3108395250.727193
power misfetisap:3893220410.726553
signal generatorisap:1350604420.724916
nonvolatile semiconductor memoryisap:3945516110.724343
semiconductor dieisap:2115603210.724308
power transistorisap:2536198340.723728
power elementisap:2731047800.723101
transistor deviceisap:3965907500.723004
flip-chip type semiconductor deviceisap:3965908230.721870
multilayer wiringisap:3913830220.721669
mention aboveisap:1593031120.718121
chip-scale packageisap:2763992880.717112
active regionisap:3856971120.716181
various integrate circuitisap:2709731230.715081
lsi chipisap:3005091650.714559
driver circuitisap:2709729450.713454
inverter circuitisap:2709729840.712529
liquid crystal display deviceisap:3965901510.711946
drain regionisap:3856970810.710571
high voltageisap:2744750350.708841
metal oxide semiconductor moisap:1080111890.707372
integrated circuitisap:2709729640.706596
photodetectorisap:536017640.703256
semiconductor light emit diodeisap:1531539090.702832
power mo deviceisap:3965954560.701237
passive elementisap:2731048320.699567
resistance elementisap:2731047460.699289
other transistorisap:2536198840.697177
display deviceisap:3965899840.695869
embedded memoryisap:3945515810.693797
gate field effect transistorisap:2536198480.692842
lcd driverisap:3874209580.692595
field effectisap:3864696140.692243
semiconductor circuitisap:2709729140.690376
semiconductor integrate circuit hereinafterisap:532869900.689494
film transistorisap:2536198130.689286
non-volatile memoryisap:3945512380.688811
flat panel displayisap:2729474160.687678
capacitor structureisap:1323045560.684401
photovoltaic cellisap:3051038390.683327
field effect transistorisap:2536198170.677659
monocrystalline siliconisap:2715385800.675719
likeisap:3108071880.675310
matrix type liquid crystalisap:2688015070.673568
lsiisap:2120851330.672425
bipolar junction transistorisap:2536199140.671279
flip chipisap:3005090420.670878
first electronic componentisap:1322710580.670874
field effect transistor fetisap:2092221380.669567
image sensorisap:3859153780.668586
ic chipisap:3005090410.668124
wiring structureisap:1323045380.665160
non-volatile memory cellisap:3051040360.664235
electronic deviceisap:3965902500.663613
mo transistorisap:2536198210.662055
microprocessorisap:541585170.661079
crystal display deviceisap:3965921900.660777
single semiconductor chipisap:3005090590.653603
circuit substrateisap:1322511420.653216
semiconductor chipisap:3005090180.653106
vlsiisap:3038468810.649102
semiconductor elementisap:2731046360.646123
silicon on insulator sousisap:2715385640.644460
memory circuitisap:2709729430.644232
junction transistorisap:2536199990.641466
print circuit boardisap:1598916840.641232
example embodimentisap:2534229220.639282
power semiconductor deviceisap:3965899380.631074
conversion elementisap:2731049720.625746
present inventionisap:1353762190.619716
stack package structureisap:1323046310.619130
sram deviceisap:3965911670.618146
p-n junctionisap:4810113360.616517
bulk siliconisap:2715385810.615936
manufacturing method thereofisap:2735703620.612597
gate electrodeisap:1320380450.607580
varactor diodeisap:1587999810.604739
cmo circuitisap:2709729340.604006
liquid crystal displayisap:2729468250.602846
infrared sensorisap:3859156220.596173
bonding pad structureisap:1323047000.596065
memory chipisap:3005090230.594675
field programmable gate arrayisap:1552200390.594378
pin diodeisap:1587998890.594302
integrate circuit chipisap:3005090450.593795
level shifterisap:2684489740.592633
mem micro electroisap:2732346020.591979
ferroelectric capacitorisap:1377640430.587432
power icisap:1083663680.587147
ledisap:2102628350.586147
first switchisap:3877735240.584382
lead frameisap:1610512580.582596
semiconductor substrateisap:1322510840.582215
eepromisap:3890848870.580880
nonvolatile memoryisap:3945512020.576895
id chipisap:3005091000.574754
magnetic tapeisap:3110199530.573639
transistor structureisap:1323046230.572499
back-illuminated semiconductor deviceisap:3965925750.567887
laserisap:1541427310.564951
methodisap:3978919530.563147
transistorisap:2536198060.560330
related methodisap:3978921470.559415
n-channel mosfetisap:3988858200.558415
resistorisap:4784443270.558129
tunnel diodeisap:1588000020.558071
processorisap:1319742670.557245
inventionisap:1353762250.557200
laser structureisap:1323046970.556165
fin field effect transistorisap:2536199090.554062
metal oxide semiconductor cmoisap:2105357490.552819
oxide layerisap:1599581690.551924
dielectric layerisap:1599580480.551243
semiconductor materialisap:4788760570.547244
matrix liquid crystal displayisap:3972220850.546764
random access memory dramisap:3088876550.544268
manufacturing methodisap:3978919590.543065
semiconductor deviceisap:3965896470.541362
electron mobility transistor hemtisap:3112191710.540268
thin film transistorisap:2536198100.537365
vcselisap:1566494760.536825
logicisap:1591914570.536331
semiconductor layerisap:1599580440.534461
processor chipisap:3005091190.534399
switching elementisap:2731046940.534282
fig 13aisap:2106564350.532680
application specific integrate circuitisap:1437580400.531494
active matrix substrateisap:1322512340.530783
wiring layerisap:1599580490.530169
fabrication of integrate circuitisap:1448945750.530067
random access memory ramisap:2127172510.529667
field effect semiconductor deviceisap:3965940090.528386
memsisap:3108725110.528183
capacitorisap:1377639970.527703
icisap:1083663440.523853
light emit diode ledisap:1531538820.523099
mask romisap:2093860500.523070
semiconductor integrate circuit deviceisap:532869890.522120
lcdisap:2135115980.521446
gateisap:3054980220.520764
mosfetisap:3988857860.518074
silicon oxideisap:1549785610.517558
wireless communicationisap:534379420.517481
bonding padisap:2151177410.514767
mo metal oxide semiconductorisap:1080111940.514632
embodiment of the inventionisap:2534226720.514353
pmo transistorisap:2536200350.514350
display portionisap:2666403650.512955
semiconductorisap:532869690.512721
bump structureisap:1323045980.512582
bga ball grid arrayisap:1570015680.512466
fig 1aisap:1079832500.512045
n channel moisap:1080112000.510767
memory cardisap:3044039820.509219
memory elementisap:2731046530.507796
triacisap:1590602680.507492
sramisap:3010233810.505988
ccdisap:2129014160.505713
fpgaisap:3086187040.495492
micro-controllerisap:2114130000.493963
operational amplifierisap:1355077480.492468
silicon control rectifierisap:2715385830.492337
random access memoryisap:3945512740.491550
igbtisap:3073286360.491378
power amplifierisap:1355077110.490882
gate dielectricisap:2558543330.489887
plurality of semiconductor deviceisap:1321167490.489876
fig 32isap:2142629050.485585
problemisap:2699771300.484682
surfaceisap:2686035200.483022
bipolarisap:2670538860.482637
memisap:2101774900.482370
present embodimentisap:2534226950.480804
thyristorisap:1339310410.480367
semiconductor light-emitting deviceisap:532869880.478285
detectorisap:4863112400.477915
romisap:2093859470.476047
moisap:1080111910.474951
material layerisap:1599581450.470759
interconnectisap:809482920.469649
layered structureisap:1323046140.467227
plurality of semiconductor chipisap:1321166600.466391
system lsiisap:2120851350.465480
method of fabricate semiconductorisap:3978921270.462742
manufacturing method thereforisap:4812634870.461135
circuitisap:2709729070.458881
method of form semiconductorisap:3978920400.458494
systemisap:3893732410.456364
bonding pad portionisap:2666403230.455731
inductorisap:4824630930.452476
resistanceisap:2547171150.450000
howeverisap:2746291060.448933
siliconisap:2715385510.444787
bare chipisap:3005091030.444319
peltier effectisap:3864696240.443929
method for manufacture semiconductorisap:3978920040.441760
production methodisap:3978922420.440775
heterostructureisap:1076347300.439166
photocellisap:1359040380.438503
etchingisap:2762131840.435107
method of fabricationisap:3978919830.430597
finfetisap:3861681390.429275
inverterisap:4816465650.429185
interposerisap:2548044380.428381
temperatureisap:1426788350.425725
polyimideisap:1342335650.423940
u.s patent application serisap:2152068320.422509
fig 2isap:2142624510.421989
oscillatorisap:2555499010.421480
testingisap:2689798010.421234
bjtisap:2130049900.420203
flashisap:1631658990.419968
other wordisap:3058389750.418640
electronic equipmentisap:1351179950.417075
antennaisap:2676639770.416661
oxideisap:1549785520.416084
applicationisap:1437578990.415866
junctionisap:4810113390.415665
cellisap:3051038620.414450
ramisap:2127172630.411825
lightisap:1531539170.411297
wiringisap:3913830190.409410
trenchisap:3951204980.409221
fieldisap:1552200280.409045
generallyisap:1376600160.409031
controlisap:2715160810.408580
fig 11isap:2142625460.408264
schottkyisap:4826034420.407737
driverisap:3874209060.407605
preferred embodimentisap:2534229330.405663
adcisap:2125661720.402871
fig 6isap:2142625110.402192
pmoisap:2132026500.401877
displayisap:2729468330.401426
fig 7isap:2142624600.400212
leadframeisap:1356152450.398155
lineisap:3056739920.398011
chemicalisap:4801248800.397269
componentisap:1322709700.394605
developmentisap:1448650040.394291
hemtisap:3112191700.393023
heatisap:3063431990.392235
cpuisap:2130372720.391649
ldisap:1073412130.391495
diodeisap:1587998510.390763
registerisap:4818420530.389578
plugisap:3035395430.389102
plurality of transistorisap:1321166540.388503
vlsusisap:1592313970.385891
fig 1isap:2142625330.385283
nisap:544118050.383524
sourceisap:3910966500.382415
asicisap:3064721890.382390
rfidisap:3093035850.381382
elementisap:2731046350.381064
fabricationisap:1448945740.380672
andisap:2096155550.377513
photocouplerisap:817818140.376700
heterojunction bipolar transistorisap:538716990.374182
channel formation regionisap:3856970860.372353
stepisap:3030408200.369079
terminalisap:4801707330.368579
representativeisap:540182970.366693
electronic productisap:2665585210.360886
method of manufacturingisap:3978919710.359754
caseisap:3068543620.357412
background of the inventionisap:2538272660.354880
dieisap:2115603240.350024
amplifierisap:1355076610.349580
sign inadvanced patentisap:3892698300.349037
powerisap:1590886750.348999
circuit configurationisap:535575800.348826
electrodeisap:1320380460.347312
semiconductor device manufacturing methodisap:3978920480.347127
featureisap:2691450520.345140
sign inadvanced patent searchpatentsprovidedisap:4817251800.343997
thermistorisap:2565661380.342329
substrateisap:1322510830.341700
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