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About:
semiconductor device
Premodifier: semiconductorHead noun: device
Same concepts
http://dbpedia.org/resource/Semiconductor_device
Broader concepts
label
provenance
confidence
electrical device
isap:
396590247
0.873341
active device
isap:
396590730
0.807902
active electronic component
isap:
425113910
0.807813
liquid crystal display device
isap:
396589885
0.802621
circuit device
isap:
396590579
0.798230
microelectronic device
isap:
396590172
0.796991
various device
isap:
396590527
0.795011
module
isap:
397915382
0.785492
vertical semiconductor device
isap:
396592337
0.768991
various application
isap:
453149211
0.750632
electronic apparatus
isap:
421708559
0.746962
electro-optical device
isap:
396589969
0.732548
semiconductor chip
isap:
489778925
0.720073
electrical component
isap:
425113872
0.718247
display device
isap:
396589764
0.715618
image sensor
isap:
397150575
0.714870
memory module
isap:
397915460
0.714284
device
isap:
396589666
0.708910
memory device
isap:
396589822
0.706557
type of electronic device
isap:
491599885
0.706553
electronic device
isap:
396589677
0.702868
dram device
isap:
396591049
0.698348
electronic part
isap:
490279646
0.695344
electronic component
isap:
425113842
0.682888
integrate circuit
isap:
445596026
0.676125
metallization process for use
isap:
439145490
0.665823
bond pad
isap:
405588610
0.663881
semiconductor material
isap:
100150511
0.657497
liquid crystal display
isap:
446742036
0.656791
dram memory circuit
isap:
445596130
0.654135
other memory device
isap:
396593908
0.650912
multi-chip module
isap:
397915381
0.648992
item
isap:
490991615
0.646746
disadvantage
isap:
69213976
0.644177
specimen
isap:
102997299
0.637365
application
isap:
453149040
0.637091
cellular phone
isap:
117355576
0.635096
digital camera
isap:
392667319
0.633905
component
isap:
425113846
0.632479
semiconductor substrate
isap:
425210262
0.630984
manner
isap:
384887180
0.626900
solar cell
isap:
489771072
0.624361
mobile computer
isap:
101307076
0.621294
video camera
isap:
392667316
0.611006
display panel
isap:
117480965
0.609480
electronic equipment
isap:
420237907
0.609268
semiconductor device in general
isap:
396591186
0.605821
fig 18
isap:
405645299
0.603066
view of a assembly
isap:
491304944
0.597972
problem
isap:
439725060
0.597355
thin film
isap:
489440215
0.591196
ic chip
isap:
489778920
0.589199
part
isap:
490279652
0.585463
field
isap:
115823547
0.584757
ic card
isap:
489701515
0.584191
electronic instrument
isap:
21013238
0.576911
apparatus
isap:
421708538
0.568045
semiconductor package
isap:
449790687
0.562900
heat sink
isap:
491430246
0.558568
circuit
isap:
445596019
0.553528
circuit board
isap:
120143658
0.551971
programmable logic device
isap:
396592518
0.546284
reliability
isap:
453172564
0.544379
condition
isap:
423742558
0.543505
semiconductor device
isap:
396589647
0.541362
heat dissipation
isap:
453428909
0.539320
system
isap:
386385533
0.532826
structure
isap:
424849792
0.532737
present invention
isap:
424211429
0.531565
semiconductor circuit
isap:
445596049
0.527026
substrate
isap:
425210258
0.527003
flash memory device
isap:
396591528
0.525220
element
isap:
447660227
0.524128
object
isap:
390769386
0.508432
vice
isap:
491306885
0.504478
embodiment of the invention
isap:
18247477
0.501962
devices
isap:
441365797
0.491785
switch
isap:
392314413
0.490895
microprocessor
isap:
471602139
0.490336
semiconductor memory device
isap:
396590011
0.487419
electrical element
isap:
447660335
0.476953
memory card
isap:
489701586
0.476608
optical semiconductor device
isap:
396591740
0.473477
same substrate
isap:
425210288
0.471675
type
isap:
491599809
0.466469
first semiconductor
isap:
22727946
0.462794
wiring substrate
isap:
425210291
0.459477
panel
isap:
117480973
0.455808
important process
isap:
439145502
0.447866
light
isap:
123259487
0.447706
manufacturing process
isap:
439145461
0.445283
random access memory dram
isap:
489672786
0.437558
random access memory sram
isap:
491400577
0.421997
workpiece
isap:
425560417
0.417337
cathode
isap:
440695695
0.415111
portable telephone
isap:
424706379
0.414825
heat
isap:
490896868
0.411291
product
isap:
439188096
0.407884
perspective view
isap:
491304971
0.407118
thin film transistor
isap:
18161059
0.405715
wafer
isap:
121922261
0.405349
manufacturing method
isap:
385267106
0.402416
manufacturing method thereof
isap:
445509337
0.395448
embodiment
isap:
18247423
0.394824
film transistor
isap:
18161065
0.392756
equipment
isap:
420237887
0.392676
process
isap:
439145456
0.390907
semiconductor element
isap:
447660317
0.387051
flash memory
isap:
387489249
0.386965
computer
isap:
101307143
0.382952
semiconductor memory
isap:
387489141
0.382228
method
isap:
385267100
0.379522
material
isap:
100150453
0.376578
fig 19
isap:
405645258
0.363412
photodetector
isap:
22385265
0.363147
mo transistor
isap:
18161101
0.361963
conventionally
isap:
471361389
0.360408
package
isap:
449790686
0.357356
semiconductor
isap:
22727908
0.355127
provided
isap:
103427207
0.355083
transistor
isap:
18161057
0.351783
manufacturing
isap:
22452042
0.350104
chip
isap:
489778912
0.348827
case
isap:
489702836
0.347888
memory
isap:
387489124
0.344164
advantage
isap:
421644121
0.338399
dram
isap:
489672781
0.337545
interest
isap:
106844818
0.325687
layer
isap:
119545578
0.320515
fabrication method
isap:
385267197
0.305311
el
isap:
514165263
0.303239
thyristor
isap:
422024957
0.302942
pad
isap:
405588616
0.301621
form
isap:
489452081
0.301280
example
isap:
446311476
0.299127
thus
isap:
491537876
0.280246
lead frame
isap:
121192555
0.279893
number
isap:
397954206
0.274469
size
isap:
491427142
0.265481
display
isap:
446742047
0.264582
mosfet
isap:
387540157
0.264407
prior art
isap:
405635428
0.258792
art
isap:
405635375
0.257713
igbt
isap:
491007433
0.252895
production
isap:
21254767
0.252890
film
isap:
489440216
0.251607
same
isap:
491804089
0.250802
therefore
isap:
423932311
0.245899
demand
isap:
395712917
0.243752
cmo
isap:
405633615
0.243190
temperature
isap:
452373571
0.242626
like
isap:
490712890
0.237213
led
isap:
405653274
0.232891
further
isap:
447853226
0.231933
test equipment
isap:
420238085
0.229086
fabrication
isap:
451383863
0.226395
test signal
isap:
395466369
0.221856
a
isap:
471804273
0.211473
however
isap:
440788052
0.210803
moreover
isap:
98874583
0.208409
effect
isap:
384952626
0.206058
capacitor
isap:
421488451
0.201285
manufacture
isap:
450881389
0.199784
speed
isap:
120726887
0.193311
reference
isap:
424605233
0.178736
diode
isap:
115223797
0.168419
gate insulate film
isap:
489301412
0.150104
invention
isap:
424211435
0.130561
test
isap:
491453498
0.074505
Narrower concepts
label
provenance
confidence
semiconductor laser
isap:
154142736
0.908400
optical sensor
isap:
385915453
0.892821
semiconductor package
isap:
276399274
0.887702
large-scale integrate circuit
isap:
270973022
0.880329
electro-optical device
isap:
396590884
0.870464
thin-film transistor
isap:
253619831
0.866502
integrate circuit
isap:
270972905
0.861616
power mosfet
isap:
398885788
0.857914
integrate circuit ic
isap:
108366347
0.851356
bipolar transistor
isap:
253619816
0.850079
field-effect transistor
isap:
253619833
0.844994
circuit board
isap:
159891661
0.837018
memory device
isap:
396589680
0.834374
computer chip
isap:
300509030
0.833069
laser diode
isap:
158799856
0.830592
interactive semiconductor device
isap:
396591223
0.828784
solar cell
isap:
305103820
0.827329
semiconductor memory device
isap:
396589819
0.820897
photodiode
isap:
254026082
0.818862
other electronic device
isap:
396594083
0.816172
mosfet metal oxide semiconductor
isap:
53287004
0.815473
semiconductor memory
isap:
394551186
0.812693
semiconductor wafer
isap:
158466153
0.812652
thin film integrate circuit
isap:
307470645
0.808576
memory ic
isap:
108366379
0.806650
thin film
isap:
307470623
0.801696
non-volatile memory device
isap:
396592141
0.800818
insulate gate bipolar transistor
isap:
305498092
0.800636
optical device
isap:
396593703
0.791926
metal oxide semiconductor field
isap:
155220002
0.791659
semiconductor device 10
isap:
396592970
0.785709
schottky diode
isap:
158799873
0.784609
dram
isap:
308887647
0.783935
nmo device
isap:
396592657
0.781827
logic circuit
isap:
270972919
0.779338
multilevel interconnection
isap:
108351170
0.779014
light-emitting device
isap:
396590143
0.774629
flash memory
isap:
394551193
0.770422
semiconductor device 1
isap:
396591008
0.769940
interlayer insulation film
isap:
307470676
0.768731
silicon wafer
isap:
158466157
0.768443
information processing apparatus
isap:
132349182
0.767793
image pickup device
isap:
396592208
0.764033
semiconductor integrate circuit
isap:
53286971
0.762341
diode led
isap:
210262854
0.761079
thin film transistor tft
isap:
210319996
0.760849
integrate circuit ics
isap:
209440912
0.759027
memory cell
isap:
305103824
0.758016
thin film transistor hereinafter
isap:
143166450
0.756190
schottky barrier diode
isap:
158799906
0.754108
cmo device
isap:
396590581
0.751102
mos field effect transistor
isap:
253620123
0.748839
nmo transistor
isap:
253620082
0.748747
tft
isap:
210319993
0.747821
metal contact
isap:
270315240
0.746797
field effect transistor hereinafter
isap:
143166452
0.744589
memory array
isap:
157001523
0.744462
liquid crystal
isap:
268801489
0.743871
dram dynamic random access
isap:
394490651
0.743245
flip-flop circuit
isap:
270973009
0.742472
memory
isap:
394551162
0.741341
contact pad
isap:
215117840
0.739738
mosfet transistor
isap:
253619933
0.738989
pn junction
isap:
481011340
0.737491
electronic component
isap:
132270979
0.737035
electronic element
isap:
273104697
0.736878
diffusion layer
isap:
159958148
0.736462
chip
isap:
300509022
0.736279
random access memory sram
isap:
301023394
0.736127
cellular phone
isap:
162459070
0.735191
mos transistor
isap:
253619865
0.734160
control circuit
isap:
270972967
0.733602
embedded dram
isap:
308887717
0.733254
gallium arsenide
isap:
484029910
0.732604
mem device
isap:
396592843
0.731745
light-emitting diode
isap:
158799868
0.730568
cmo transistor
isap:
253620043
0.730458
soi substrate
isap:
132251103
0.729372
phase change memory
isap:
394551374
0.727724
memory unit
isap:
310839525
0.727193
power misfet
isap:
389322041
0.726553
signal generator
isap:
135060442
0.724916
nonvolatile semiconductor memory
isap:
394551611
0.724343
semiconductor die
isap:
211560321
0.724308
power transistor
isap:
253619834
0.723728
power element
isap:
273104780
0.723101
transistor device
isap:
396590750
0.723004
flip-chip type semiconductor device
isap:
396590823
0.721870
multilayer wiring
isap:
391383022
0.721669
mention above
isap:
159303112
0.718121
chip-scale package
isap:
276399288
0.717112
active region
isap:
385697112
0.716181
various integrate circuit
isap:
270973123
0.715081
lsi chip
isap:
300509165
0.714559
driver circuit
isap:
270972945
0.713454
inverter circuit
isap:
270972984
0.712529
liquid crystal display device
isap:
396590151
0.711946
drain region
isap:
385697081
0.710571
high voltage
isap:
274475035
0.708841
metal oxide semiconductor mo
isap:
108011189
0.707372
integrated circuit
isap:
270972964
0.706596
photodetector
isap:
53601764
0.703256
semiconductor light emit diode
isap:
153153909
0.702832
power mo device
isap:
396595456
0.701237
passive element
isap:
273104832
0.699567
resistance element
isap:
273104746
0.699289
other transistor
isap:
253619884
0.697177
display device
isap:
396589984
0.695869
embedded memory
isap:
394551581
0.693797
gate field effect transistor
isap:
253619848
0.692842
lcd driver
isap:
387420958
0.692595
field effect
isap:
386469614
0.692243
semiconductor circuit
isap:
270972914
0.690376
semiconductor integrate circuit hereinafter
isap:
53286990
0.689494
film transistor
isap:
253619813
0.689286
non-volatile memory
isap:
394551238
0.688811
flat panel display
isap:
272947416
0.687678
capacitor structure
isap:
132304556
0.684401
photovoltaic cell
isap:
305103839
0.683327
field effect transistor
isap:
253619817
0.677659
monocrystalline silicon
isap:
271538580
0.675719
like
isap:
310807188
0.675310
matrix type liquid crystal
isap:
268801507
0.673568
lsi
isap:
212085133
0.672425
bipolar junction transistor
isap:
253619914
0.671279
flip chip
isap:
300509042
0.670878
first electronic component
isap:
132271058
0.670874
field effect transistor fet
isap:
209222138
0.669567
image sensor
isap:
385915378
0.668586
ic chip
isap:
300509041
0.668124
wiring structure
isap:
132304538
0.665160
non-volatile memory cell
isap:
305104036
0.664235
electronic device
isap:
396590250
0.663613
mo transistor
isap:
253619821
0.662055
microprocessor
isap:
54158517
0.661079
crystal display device
isap:
396592190
0.660777
single semiconductor chip
isap:
300509059
0.653603
circuit substrate
isap:
132251142
0.653216
semiconductor chip
isap:
300509018
0.653106
vlsi
isap:
303846881
0.649102
semiconductor element
isap:
273104636
0.646123
silicon on insulator sous
isap:
271538564
0.644460
memory circuit
isap:
270972943
0.644232
junction transistor
isap:
253619999
0.641466
print circuit board
isap:
159891684
0.641232
example embodiment
isap:
253422922
0.639282
power semiconductor device
isap:
396589938
0.631074
conversion element
isap:
273104972
0.625746
present invention
isap:
135376219
0.619716
stack package structure
isap:
132304631
0.619130
sram device
isap:
396591167
0.618146
p-n junction
isap:
481011336
0.616517
bulk silicon
isap:
271538581
0.615936
manufacturing method thereof
isap:
273570362
0.612597
gate electrode
isap:
132038045
0.607580
varactor diode
isap:
158799981
0.604739
cmo circuit
isap:
270972934
0.604006
liquid crystal display
isap:
272946825
0.602846
infrared sensor
isap:
385915622
0.596173
bonding pad structure
isap:
132304700
0.596065
memory chip
isap:
300509023
0.594675
field programmable gate array
isap:
155220039
0.594378
pin diode
isap:
158799889
0.594302
integrate circuit chip
isap:
300509045
0.593795
level shifter
isap:
268448974
0.592633
mem micro electro
isap:
273234602
0.591979
ferroelectric capacitor
isap:
137764043
0.587432
power ic
isap:
108366368
0.587147
led
isap:
210262835
0.586147
first switch
isap:
387773524
0.584382
lead frame
isap:
161051258
0.582596
semiconductor substrate
isap:
132251084
0.582215
eeprom
isap:
389084887
0.580880
nonvolatile memory
isap:
394551202
0.576895
id chip
isap:
300509100
0.574754
magnetic tape
isap:
311019953
0.573639
transistor structure
isap:
132304623
0.572499
back-illuminated semiconductor device
isap:
396592575
0.567887
laser
isap:
154142731
0.564951
method
isap:
397891953
0.563147
transistor
isap:
253619806
0.560330
related method
isap:
397892147
0.559415
n-channel mosfet
isap:
398885820
0.558415
resistor
isap:
478444327
0.558129
tunnel diode
isap:
158800002
0.558071
processor
isap:
131974267
0.557245
invention
isap:
135376225
0.557200
laser structure
isap:
132304697
0.556165
fin field effect transistor
isap:
253619909
0.554062
metal oxide semiconductor cmo
isap:
210535749
0.552819
oxide layer
isap:
159958169
0.551924
dielectric layer
isap:
159958048
0.551243
semiconductor material
isap:
478876057
0.547244
matrix liquid crystal display
isap:
397222085
0.546764
random access memory dram
isap:
308887655
0.544268
manufacturing method
isap:
397891959
0.543065
semiconductor device
isap:
396589647
0.541362
electron mobility transistor hemt
isap:
311219171
0.540268
thin film transistor
isap:
253619810
0.537365
vcsel
isap:
156649476
0.536825
logic
isap:
159191457
0.536331
semiconductor layer
isap:
159958044
0.534461
processor chip
isap:
300509119
0.534399
switching element
isap:
273104694
0.534282
fig 13a
isap:
210656435
0.532680
application specific integrate circuit
isap:
143758040
0.531494
active matrix substrate
isap:
132251234
0.530783
wiring layer
isap:
159958049
0.530169
fabrication of integrate circuit
isap:
144894575
0.530067
random access memory ram
isap:
212717251
0.529667
field effect semiconductor device
isap:
396594009
0.528386
mems
isap:
310872511
0.528183
capacitor
isap:
137763997
0.527703
ic
isap:
108366344
0.523853
light emit diode led
isap:
153153882
0.523099
mask rom
isap:
209386050
0.523070
semiconductor integrate circuit device
isap:
53286989
0.522120
lcd
isap:
213511598
0.521446
gate
isap:
305498022
0.520764
mosfet
isap:
398885786
0.518074
silicon oxide
isap:
154978561
0.517558
wireless communication
isap:
53437942
0.517481
bonding pad
isap:
215117741
0.514767
mo metal oxide semiconductor
isap:
108011194
0.514632
embodiment of the invention
isap:
253422672
0.514353
pmo transistor
isap:
253620035
0.514350
display portion
isap:
266640365
0.512955
semiconductor
isap:
53286969
0.512721
bump structure
isap:
132304598
0.512582
bga ball grid array
isap:
157001568
0.512466
fig 1a
isap:
107983250
0.512045
n channel mo
isap:
108011200
0.510767
memory card
isap:
304403982
0.509219
memory element
isap:
273104653
0.507796
triac
isap:
159060268
0.507492
sram
isap:
301023381
0.505988
ccd
isap:
212901416
0.505713
fpga
isap:
308618704
0.495492
micro-controller
isap:
211413000
0.493963
operational amplifier
isap:
135507748
0.492468
silicon control rectifier
isap:
271538583
0.492337
random access memory
isap:
394551274
0.491550
igbt
isap:
307328636
0.491378
power amplifier
isap:
135507711
0.490882
gate dielectric
isap:
255854333
0.489887
plurality of semiconductor device
isap:
132116749
0.489876
fig 32
isap:
214262905
0.485585
problem
isap:
269977130
0.484682
surface
isap:
268603520
0.483022
bipolar
isap:
267053886
0.482637
mem
isap:
210177490
0.482370
present embodiment
isap:
253422695
0.480804
thyristor
isap:
133931041
0.480367
semiconductor light-emitting device
isap:
53286988
0.478285
detector
isap:
486311240
0.477915
rom
isap:
209385947
0.476047
mo
isap:
108011191
0.474951
material layer
isap:
159958145
0.470759
interconnect
isap:
80948292
0.469649
layered structure
isap:
132304614
0.467227
plurality of semiconductor chip
isap:
132116660
0.466391
system lsi
isap:
212085135
0.465480
method of fabricate semiconductor
isap:
397892127
0.462742
manufacturing method therefor
isap:
481263487
0.461135
circuit
isap:
270972907
0.458881
method of form semiconductor
isap:
397892040
0.458494
system
isap:
389373241
0.456364
bonding pad portion
isap:
266640323
0.455731
inductor
isap:
482463093
0.452476
resistance
isap:
254717115
0.450000
however
isap:
274629106
0.448933
silicon
isap:
271538551
0.444787
bare chip
isap:
300509103
0.444319
peltier effect
isap:
386469624
0.443929
method for manufacture semiconductor
isap:
397892004
0.441760
production method
isap:
397892242
0.440775
heterostructure
isap:
107634730
0.439166
photocell
isap:
135904038
0.438503
etching
isap:
276213184
0.435107
method of fabrication
isap:
397891983
0.430597
finfet
isap:
386168139
0.429275
inverter
isap:
481646565
0.429185
interposer
isap:
254804438
0.428381
temperature
isap:
142678835
0.425725
polyimide
isap:
134233565
0.423940
u.s patent application ser
isap:
215206832
0.422509
fig 2
isap:
214262451
0.421989
oscillator
isap:
255549901
0.421480
testing
isap:
268979801
0.421234
bjt
isap:
213004990
0.420203
flash
isap:
163165899
0.419968
other word
isap:
305838975
0.418640
electronic equipment
isap:
135117995
0.417075
antenna
isap:
267663977
0.416661
oxide
isap:
154978552
0.416084
application
isap:
143757899
0.415866
junction
isap:
481011339
0.415665
cell
isap:
305103862
0.414450
ram
isap:
212717263
0.411825
light
isap:
153153917
0.411297
wiring
isap:
391383019
0.409410
trench
isap:
395120498
0.409221
field
isap:
155220028
0.409045
generally
isap:
137660016
0.409031
control
isap:
271516081
0.408580
fig 11
isap:
214262546
0.408264
schottky
isap:
482603442
0.407737
driver
isap:
387420906
0.407605
preferred embodiment
isap:
253422933
0.405663
adc
isap:
212566172
0.402871
fig 6
isap:
214262511
0.402192
pmo
isap:
213202650
0.401877
display
isap:
272946833
0.401426
fig 7
isap:
214262460
0.400212
leadframe
isap:
135615245
0.398155
line
isap:
305673992
0.398011
chemical
isap:
480124880
0.397269
component
isap:
132270970
0.394605
development
isap:
144865004
0.394291
hemt
isap:
311219170
0.393023
heat
isap:
306343199
0.392235
cpu
isap:
213037272
0.391649
ld
isap:
107341213
0.391495
diode
isap:
158799851
0.390763
register
isap:
481842053
0.389578
plug
isap:
303539543
0.389102
plurality of transistor
isap:
132116654
0.388503
vlsus
isap:
159231397
0.385891
fig 1
isap:
214262533
0.385283
n
isap:
54411805
0.383524
source
isap:
391096650
0.382415
asic
isap:
306472189
0.382390
rfid
isap:
309303585
0.381382
element
isap:
273104635
0.381064
fabrication
isap:
144894574
0.380672
and
isap:
209615555
0.377513
photocoupler
isap:
81781814
0.376700
heterojunction bipolar transistor
isap:
53871699
0.374182
channel formation region
isap:
385697086
0.372353
step
isap:
303040820
0.369079
terminal
isap:
480170733
0.368579
representative
isap:
54018297
0.366693
electronic product
isap:
266558521
0.360886
method of manufacturing
isap:
397891971
0.359754
case
isap:
306854362
0.357412
background of the invention
isap:
253827266
0.354880
die
isap:
211560324
0.350024
amplifier
isap:
135507661
0.349580
sign inadvanced patent
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389269830
0.349037
power
isap:
159088675
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circuit configuration
isap:
53557580
0.348826
electrode
isap:
132038046
0.347312
semiconductor device manufacturing method
isap:
397892048
0.347127
feature
isap:
269145052
0.345140
sign inadvanced patent searchpatentsprovided
isap:
481725180
0.343997
thermistor
isap:
256566138
0.342329
substrate
isap:
132251083
0.341700
etc
isap:
212137431
0.338724
aluminum
isap:
485759915
0.334628
second embodiment
isap:
253423081
0.333418
diffusion
isap:
132235457
0.332739
signal
isap:
390310321
0.331663
microcomputer
isap:
53589581
0.330660
operation
isap:
134366763
0.330211
fabrication method
isap:
397891968
0.330090
varistor
isap:
482567594
0.328280
implementation
isap:
54751584
0.327896
interconnection
isap:
108351169
0.327494
production
isap:
255019385
0.325983
object
isap:
391981796
0.322936
fet
isap:
209222136
0.320052
further
isap:
274612575
0.319279
gaas
isap:
300574110
0.316067
bump
isap:
304107347
0.313175
germanium
isap:
132561643
0.312659
igfet
isap:
154694655
0.311023
plate
isap:
157689376
0.310845
result
isap:
398472690
0.309008
filter
isap:
389410679
0.307645
nfet
isap:
305905866
0.304314
device
isap:
396589688
0.303791
embodiment
isap:
253422656
0.303623
constant current source
isap:
391096720
0.297802
portion
isap:
266640278
0.295712
sdram
isap:
157609868
0.295016
general
isap:
269635952
0.289580
film
isap:
307470618
0.289324
switch
isap:
387773424
0.286626
esd electrostatic discharge protection
isap:
211164213
0.284590
structure of a semiconductor
isap:
132304543
0.280930
method of manufacture semiconductor
isap:
397892034
0.279190
sensor
isap:
385915526
0.276760
conductive element
isap:
273104980
0.276192
structure
isap:
132304536
0.275991
layer
isap:
159958045
0.274970
cmo
isap:
210535742
0.274401
of example
isap:
266656035
0.272977
wire
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304032547
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means
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154445100
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wafer
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158466152
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art
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215211856
0.269447
assembly
isap:
478529232
0.268931
technology
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257386555
0.267428
jfet
isap:
308281853
0.267317
arrangement
isap:
143782476
0.264928
aspect of the invention
isap:
385386181
0.264499
structure of the invention
isap:
132304605
0.263461
thus
isap:
301975317
0.261218
material
isap:
478876079
0.259473
diac
isap:
306726975
0.258088
ruthenium
isap:
136374905
0.258054
fig
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214262704
0.256598
si
isap:
108559800
0.253719
ic'
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215216880
0.252891
example
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266655863
0.249036
method for manufacturing
isap:
397892007
0.247037
lsis
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304621121
0.246091
fig 3
isap:
214262481
0.245872
product
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266558535
0.243859
type
isap:
301500066
0.243739
same
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310033533
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configuration
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53557532
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lead
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305856393
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analog
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395208128
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microdevice
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regard
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394534602
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dmd
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214936107
0.219756
design
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394885154
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metal
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162133144
0.216148
ion
isap:
214749420
0.211513
respectively
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81877809
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area
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311795764
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st
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contact
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270315239
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target
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390469356
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provided
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478312555
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p
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54847361
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degradation
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144016348
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process
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274495661
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package
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equipment
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135118035
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technique
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manufacturing
isap:
53477156
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e.g
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210792616
0.161660
scr
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213093535
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c
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54488204
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oxygen
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391753654
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improvement
isap:
145117056
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apparatus
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132349032
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use
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215284264
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specification
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form
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addition
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485373185
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abstract
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basis
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160444737
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