About: dielectric layer

Premodifier: dielectric
Head noun: layer

Same concepts

Broader concepts

label	provenance	confidence
conductive layer	isap:370507561	0.791238
subsequent layer	isap:370507547	0.789651
more layer	isap:370507721	0.775534
first dielectric layer	isap:370507442	0.746445
dielectric layer	isap:370507233	0.741159
present invention	isap:335566416	0.717073
layer	isap:370507129	0.703475
passivation layer	isap:370509292	0.684873
material	isap:293789278	0.680447
suitable material	isap:293789387	0.598844
circuit board	isap:370560792	0.587654
component	isap:336158735	0.579409
other layer	isap:370509241	0.565701
device fabrication	isap:208660368	0.562410
structure	isap:337258109	0.558626
semiconductor device	isap:159958048	0.551243
element	isap:221495786	0.549752
film	isap:199833510	0.532489
opening	isap:226156129	0.519374
alternatively	isap:96392172	0.481450
portion	isap:227810517	0.465993
deposition	isap:260814021	0.456133
gate	isap:199766159	0.440226
layer 32	isap:370510177	0.434702
laminate	isap:291739947	0.423974
processing	isap:259531078	0.397404
substrate	isap:336237962	0.393332
part	isap:197341943	0.310571
method	isap:158044554	0.300472
sioch	isap:364446457	0.264147
process	isap:222184643	0.183284
pattern	isap:230132668	0.147906

Narrower concepts

label	provenance	confidence
oxide layer	isap:370507204	0.875133
interlevel dielectric layer	isap:370509179	0.814466
silicon nitride	isap:36263079	0.808011
barrier layer	isap:370508274	0.794375
passivation layer	isap:370508505	0.794301
metallization layer	isap:370508592	0.763142
dielectric layer	isap:370507233	0.741159
gate electrode	isap:13809068	0.729848
aluminum oxide	isap:371623333	0.729373
silicon dioxide sio2	isap:85368928	0.709295
anodized aluminum	isap:358513314	0.699642
ceramic layer	isap:370509277	0.697385
polyimide film	isap:85799773	0.688077
protective layer	isap:370508831	0.681931
dielectric layer 22	isap:370509052	0.669146
metal layer	isap:370509600	0.662563
layer of a metal	isap:370508212	0.658434
silicon oxide	isap:371623251	0.643340
dielectric material	isap:360099369	0.634339
liquid crystal	isap:39742729	0.618794
silicon dioxide layer	isap:370507476	0.608840
semiconductor layer	isap:370510095	0.530749
silicon dioxide	isap:31864681	0.528613
gate dielectric layer	isap:93984674	0.503001
barium titanate	isap:363365230	0.497761
nitride	isap:36263080	0.490642
present invention	isap:16604313	0.461682
layer of a oxide	isap:370508658	0.452608
hfo2 dielectric layer	isap:87286963	0.443995
spacer layer	isap:370509114	0.443493
substrate	isap:14004386	0.429944
al	isap:464759000	0.426036
nitride oxide	isap:371623425	0.416440
hafnium	isap:40716619	0.412665
silicate	isap:363760487	0.399781
oxynitride	isap:472999061	0.389026
layer	isap:370507142	0.386777
aluminum	isap:358513315	0.380678
titanium	isap:359754787	0.372139
etching	isap:31248312	0.366367
al2o3	isap:364995477	0.361258
oxide	isap:371623253	0.358097
polysilicon	isap:414083997	0.354855
glass	isap:365507733	0.339469
sio2	isap:85368920	0.333293
silicon	isap:33838061	0.321837
film	isap:85799732	0.318735
drain	isap:368911481	0.310339
photoresist	isap:414955926	0.293127
portion	isap:40110260	0.284961
si3n4	isap:364849376	0.280373
polymer	isap:35314072	0.267441
material	isap:360099234	0.265722
region	isap:123813703	0.255490
method	isap:123423959	0.226148
oxidation	isap:12215095	0.226009
polyimide	isap:14724310	0.211528
surface	isap:35985413	0.192889
hole	isap:91643137	0.183615
embodiment	isap:474052881	0.160691
device	isap:119545590	0.150383
thickness	isap:15823538	0.124499