About: semiconductor layer

Premodifier: semiconductor
Head noun: layer

Same concepts

Broader concepts

label	provenance	confidence
layer	isap:370507139	0.819788
silicon nitride layer	isap:370509475	0.752417
epitaxial layer	isap:370507711	0.706882
semiconductor layer	isap:370507172	0.704844
second semiconductor	isap:96668028	0.704029
buffer layer	isap:370507581	0.698253
active layer	isap:370507646	0.698194
semiconductor thin film	isap:96668053	0.665308
field-effect transistor	isap:258621096	0.646300
semiconductor substrate	isap:336237969	0.644278
structure	isap:337258114	0.637566
thin film transistor	isap:258621087	0.636097
semiconductor film	isap:199833560	0.634884
semiconductor material	isap:293789546	0.629298
surface of the semiconductor	isap:224555768	0.618792
patent searchpatentsa semiconductor device	isap:159958206	0.611379
thin film	isap:199833680	0.593046
device layer	isap:370507545	0.585969
material	isap:293789337	0.570960
portion	isap:227810515	0.551721
film	isap:199833506	0.540451
semiconductor device	isap:159958044	0.534461
present invention	isap:335566414	0.532475
dielectric layer	isap:370510095	0.530749
crystalline silicon film	isap:199833649	0.526734
element	isap:221495790	0.518223
silicon	isap:228243433	0.469502
diode	isap:375910787	0.448649
body	isap:199410883	0.436643
example	isap:230836703	0.424063
island	isap:164956742	0.391900
region	isap:161039594	0.328176
source electrode	isap:340264413	0.319646
embodiment	isap:257905555	0.309780
method	isap:158044476	0.257846
buffer	isap:159272731	0.237472
invention	isap:335566453	0.207609
apparatus	isap:336517461	0.183966

Narrower concepts

label	provenance	confidence
amorphous silicon	isap:33838065	0.805249
active layer	isap:370507275	0.790427
polycrystalline silicon	isap:33838111	0.758925
channel formation	isap:15797036	0.757559
amorphous silicon a-si	isap:87750314	0.744421
channel formation region	isap:123813685	0.743068
semiconductor material	isap:360099280	0.735036
polycrystalline semiconductor	isap:142331281	0.719350
p-type layer	isap:370507936	0.711969
channel area	isap:89185276	0.704968
semiconductor layer	isap:370507172	0.704844
silicon layer	isap:370507874	0.698865
material layer	isap:370510036	0.683395
silicon oxide film	isap:85799709	0.671819
silicon germanium sige	isap:92736506	0.644416
metal element	isap:40714620	0.636810
semiconductor body	isap:95521623	0.624650
amorphous structure	isap:13236796	0.619031
second conductivity type	isap:92294346	0.618021
doped silicon	isap:33838109	0.617634
first region	isap:123813724	0.594588
channel region	isap:123813686	0.582572
gate electrode	isap:13808980	0.530267
impurity element	isap:40714579	0.529872
channel portion	isap:40110376	0.513112
layer	isap:370507148	0.416109
p-n junction	isap:358670336	0.409163
source	isap:115259988	0.406711
region	isap:123813689	0.376755
a-si	isap:87750311	0.371205
channel form region	isap:37510923	0.348430
sputtering	isap:475506763	0.344872
silicon	isap:33838060	0.343068
semiconductor	isap:142331278	0.324076
indium	isap:119354361	0.320498
embodiment	isap:474052913	0.319310
si	isap:463974778	0.316798
n	isap:131421416	0.316665
quantum	isap:36588706	0.308574
electrode	isap:13808990	0.308549
titanium	isap:359754790	0.305623
portion	isap:40110273	0.305131
germanium	isap:14692383	0.301381
etching	isap:31248313	0.295701
step	isap:92569276	0.284868
film	isap:85799663	0.255134
plurality	isap:14215450	0.251360
channel	isap:37510926	0.227813
gan	isap:465992494	0.223821
like	isap:91212944	0.222747
material	isap:360099245	0.222043
transistor	isap:475975525	0.202563
portion of the semiconductor	isap:40110305	0.195586
light	isap:365454385	0.183384
method	isap:123423958	0.182094
ch	isap:464123339	0.141395
area	isap:89185289	0.131665
however	isap:37919583	0.118914