Premodifier: semiconductor
Head noun: material

Same concepts
http://dbpedia.org/resource/Semiconductor

Broader concepts

labelprovenanceconfidence
inorganic materialisap:611694320.807519
various materialisap:611728730.802628
suitable materialisap:611695940.791665
semiconductor materialisap:611689210.779370
inorganic semiconductor materialisap:611710500.779008
organic semiconductor materialisap:611705430.769360
intrinsic semiconductor materialisap:611713530.763898
semiconductor substrateisap:1858904720.753892
semiconductor layerisap:3600992800.735036
conductive materialisap:611689980.728449
variety of materialisap:3416452560.718872
other materialisap:611727610.713235
more materialisap:611716890.679138
epitaxial layerisap:3600993720.641939
dielectric materialisap:611690930.616027
materialisap:611685030.611692
electronic componentisap:1864510440.593900
semiconductorisap:1530175470.552092
semiconductor deviceisap:4788760570.547244
substanceisap:1830771280.516614
substrateisap:1858904540.502988
structureisap:1867485270.498377
exampleisap:3466577670.492315
typeisap:3783030760.464642
substrate 12isap:1858904800.464103
deviceisap:4788760120.453446
memberisap:4786321370.451991
coreisap:3833010860.405555
layerisap:3600992660.389551
substrate 301isap:1858904830.372253
substrate 10isap:1858905380.361302
regionisap:4799791250.355368
same materialisap:611722800.339478
metalisap:3581254910.306993
artisap:3496270190.293869
present inventionisap:1854485100.287200
dielectricisap:1809448050.275031
nisap:633841570.269599
transistorisap:1814587370.268701
drainisap:3580459640.257963
siliconisap:3453853380.181236
howeverisap:3446574750.177268
researchisap:606214530.169093

Narrower concepts

labelprovenanceconfidence
gallium arsenideisap:602358050.876518
silicon dioxideisap:463710980.835124
silicon germaniumisap:4122096310.832839
single crystalline siliconisap:453567730.828455
monocrystalline siliconisap:453567470.828227
compound semiconductorisap:639748570.817168
silicon-germaniumisap:4593502930.808049
p-type siliconisap:453569200.802357
amorphous siliconisap:453567210.799978
indium phosphideisap:4118754470.795787
doped siliconisap:453568550.791885
n-type siliconisap:453568780.789560
semiconductor materialisap:611689210.779370
germaniumisap:4122096290.772142
group ii-viisap:2983669350.771363
gallium arsenide gaaisap:3305347610.765816
cadmium tellurideisap:4114707110.762326
cadmium selenideisap:594265330.756588
bismuth tellurideisap:4114707010.748595
silicon carbideisap:476814120.747242
zinc oxideisap:2976647850.734684
single crystal siliconisap:453567570.734176
silicon siisap:1404855790.733307
integrate circuitisap:460317490.727758
ganisap:3299926640.710783
polycrystalline siliconisap:453567480.708337
alumina al2o3isap:2937197070.704268
germanium geisap:1405624770.703475
silicon carbide sicisap:3290699200.700841
silicon waferisap:2935528440.697476
carbon nanotubeisap:569081480.694311
silicon germanium sigeisap:4567551050.680728
aluminum nitride alnisap:3294031810.660086
semiconductor deviceisap:1001505110.657497
group iiisap:1408430020.653503
silicon on insulator sousisap:453569700.651666
limited toisap:1408358420.642227
semiconductor layerisap:2937895460.629298
gallium nitrideisap:448415740.629241
active regionisap:1066398570.624933
gallium arsenide waferisap:2935528530.617759
siliconisap:453567060.614746
polysiliconisap:4623021960.613640
diamondisap:447879510.612829
iii-v semiconductorisap:639748680.605986
group iiiisap:3293572390.601976
silicon e.gisap:3318086210.595299
metal oxideisap:2976644250.589401
semiconductor substrateisap:4102468350.583342
gapisap:3310369450.562462
exampleisap:510410720.553758
gallium nitride ganisap:3299926660.549803
gaasisap:4539385130.549636
group ivisap:1412224510.541263
group visap:4726019800.537715
cdteisap:4596873350.533451
oxide semiconductorisap:639748770.533088
single crystalisap:485087980.523216
aluminumisap:623204320.513353
siisap:1404855770.510818
galliumisap:456878080.507771
geisap:1405624740.503182
gaaisap:3305347590.499054
glassisap:2987062830.498128
ceramicisap:447734960.495906
polymerisap:477931790.461612
silicon on insulatorisap:453571400.450246
znoisap:3303675450.449414
transistorisap:2825264720.448976
semiconductorisap:639748860.448167
waferisap:2935528480.447781
znisap:1406976620.447328
polycrystallineisap:1408390120.443520
titaniumisap:582976670.439676
electrodeisap:4111485670.433776
group vi elementisap:510008860.433463
leadisap:4552386970.431638
zincisap:4603794720.431638
inpisap:3296142290.430118
materialisap:611686320.420445
insbisap:4569748390.413274
plasticisap:501042320.410569
room temperatureisap:4628075190.408959
copperisap:989628280.407857
etcisap:3296916170.402896
sicisap:3290699230.402072
present inventionisap:4129235980.400530
sapphireisap:623658390.399985
layerisap:2937892930.396041
gaalumisap:1045731360.395707
sio2isap:4591096040.395064
oxideisap:2976643480.392801
layer of siliconisap:2937893420.385569
znseisap:4613751780.385031
nitrides bulk crystalisap:485088520.383221
cdseisap:4608312590.376282
sigeisap:4567551040.375462
indiumisap:993674430.372238
metalisap:2920353460.361487
elementisap:510009720.354241
telluriumisap:4111994330.352135
cdisap:1415768230.351784
hgcdteisap:1002843120.336048
likeisap:4551814970.331762
arsenicisap:475110050.324688
alnisap:3294031720.324263
cztisap:3303529380.315590
tio2isap:4589875530.310531
cdznteisap:1048206510.304297
high powerisap:2924827740.298185
substrate 10isap:4102468410.291352
bodyisap:4578251270.286420
ingaasisap:1008389530.285150
iii-visap:2940159540.284095
methodisap:990279710.281085
ingaalpisap:497461680.276616
typicallyisap:4094735120.273856
pedestalisap:574573580.265204
group iiiisap:2952549690.258821
nanotubeisap:569081820.254114
inisap:1404665990.247189
siliconeisap:577672910.235088
alganisap:2961983010.231644
howeverisap:485390670.214867
pisap:4726453130.208261
substrateisap:4102467640.189732
resultisap:1021232840.162231