Head noun: silicon

Same concepts
http://dbpedia.org/resource/Silicon

Broader concepts

labelprovenanceconfidence
mineralisap:4371929070.784897
heavy elementisap:4295969840.757371
raw materialisap:453567260.751411
dielectric materialisap:453567080.741578
semiconductor filmisap:737201740.687959
componentisap:3160972670.677760
elementisap:4295969820.667611
elemental semiconductorisap:1458954990.641301
semiconductorisap:1458954980.638812
thingisap:346344220.635507
common materialisap:453567200.634302
trace elementisap:4295969860.623294
semiconductor materialisap:453567060.614746
silicon compoundisap:486233900.582593
semiconductor wafer materialisap:453568770.581246
chemical elementisap:4295969850.580115
suitable semiconductor materialisap:453567350.579131
different type of materialisap:752828530.578150
wide variety of materialisap:4390096070.576790
semiconductor waferisap:381431580.574177
trace mineralisap:4371929080.572752
inorganic conductorisap:3195502370.569839
thin film semiconductor materialisap:453570980.566287
semiconductor structureisap:3210351940.565226
integrate circuit chipisap:737838830.564803
electronic materialisap:453568250.563098
brittle materialisap:453567170.563096
high index of refractionisap:390374790.562732
conventional materialisap:453567630.562143
substanceisap:3180367950.550491
diffusion barrier layerisap:338380810.548846
filmisap:737201720.546477
planar substrateisap:3193853000.545334
indirect band gap semiconductorisap:1458955170.544796
metallic elementisap:4295969940.543697
suitable substrateisap:3193852580.542448
semiconductor substrateisap:3193852570.542414
silicon materialisap:453568640.538810
foreign substrateisap:3193852840.536951
etchable materialisap:453567390.535159
familiar materialisap:453568260.533393
wide range of materialisap:387895450.532870
traditional semiconducting materialisap:453568930.529062
conventional substrateisap:3193852870.527982
stable materialisap:453568090.526665
traditional semiconductor materialisap:453567580.524712
semiconductor substrate materialisap:453567530.524430
common semiconductor materialisap:453567380.519925
integrate circuit fabricationisap:668573770.516554
semiconductor technologyisap:2428495390.516464
suitable materialisap:453567090.516435
low thermal expansion coefficientisap:661851810.515483
semiconductor surfaceisap:4313420580.514981
standard semiconductor materialisap:453569960.513949
various materialisap:453567190.512409
tetravalent elementisap:4295969920.512002
most other semiconductorisap:1458955130.510729
inorganic substanceisap:3180367960.510554
silicon waferisap:381431640.509932
elastomeric materialisap:453567540.509601
similar materialisap:453567440.508317
heavier elementisap:4295969890.507702
combinationisap:659787170.507197
crystalline materialisap:453567330.506876
conventional semiconductor materialisap:453567430.505723
inorganic compoundisap:486233910.504253
metal oxide materialisap:453569610.503896
substrate materialisap:453567130.503753
integrate circuitisap:4348969050.502667
crystalisap:4290926440.502535
synthetic materialisap:453567650.500683
fine inorganic particleisap:515662910.499722
crystalline substrateisap:3193852600.496754
inorganic materialisap:453567070.496018
insulatorisap:3166885280.495981
compound semiconductorisap:1458955150.494472
silicon-containing materialisap:453567500.493641
suitable dielectric materialisap:453567220.491737
partisap:755746960.491397
element in the atmosphereisap:4295970310.491033
several different materialisap:453571930.490274
impurityisap:514382920.490252
materialisap:453567050.488605
silicon substrateisap:3193853150.488504
other semiconductor materialisap:453567370.487302
organic compoundisap:486233950.485487
etch processisap:4318751200.485325
other substrate materialisap:453568490.484098
material layerisap:338380770.482924
semiconductor substrate 30isap:3193853290.482130
inorganic insulation filmisap:737202330.481459
wafer materialisap:453567890.480375
layer of other materialisap:338381440.480328
many different materialisap:453568150.478842
chemical vapor depositionisap:2452299550.478518
photovoltaic materialisap:453568190.476523
non-conductive materialisap:453568380.475799
other dielectric materialisap:453567420.475579
rare earth metalisap:363841500.473749
semiconductor-based materialisap:453567840.472765
suitable semiconducting materialisap:453569710.471495
semiconductor substrate 100isap:3193853050.471312
conventional substrate materialisap:453570580.469868
silicon carbideisap:4362393380.468784
such materialisap:453567400.467908
inorganic semiconductorisap:1458955000.467781
single crystal semiconductor materialisap:453567670.466110
structureisap:3210351930.466017
expensive materialisap:453567850.464560
different materialisap:453567290.463340
semi-conductorisap:1241719070.461998
nonmetallic elementisap:4295969970.461668
use materialisap:453567240.461452
semiconductor manufactureisap:661441560.461226
suitable substrate materialisap:453567680.461136
suitable plastic materialisap:453569190.458042
single crystal substrateisap:3193852910.454909
certain semiconductorisap:1458955160.454695
technologyisap:2428495380.454233
suitable rigid materialisap:453570000.452904
biocompatible materialisap:453567690.451898
hard materialisap:453567320.451191
piezoresistive materialisap:453569820.449296
ceramic substrateisap:3193852800.448999
transmissive materialisap:453570910.448915
nitride materialisap:453567600.446806
semiconductor deviceisap:2715385510.444787
second layerisap:338380920.444009
semiconducting materialisap:453567460.443341
additiveisap:479681040.442468
variety of semiconductor materialisap:4390096090.442234
hardware implementationisap:1242745420.442203
alloying elementisap:4295969960.440962
metalloidisap:3179493190.440859
wafer of semiconductor materialisap:381431600.440548
multiple materialisap:453570720.439906
inorganic elementisap:4295969980.439737
kind of semiconductor materialisap:730276260.438979
body of semiconductor materialisap:737608310.438424
flat substrateisap:3193853340.437586
variety of suitable materialisap:4390096120.437231
semi-metallic elementisap:4295970020.436820
desire substrateisap:3193852890.436016
refractory metalisap:363841430.435883
several materialisap:453568480.435118
target materialisap:453571450.435037
ceramic powderisap:2715918730.434701
advanced ceramicisap:4326611790.434494
inorganic counterpartisap:647546250.434326
substrateisap:3193852560.433610
desirable materialisap:453568300.433370
various dielectricisap:2446667040.433356
artificial materialisap:453569790.433048
chip of semiconductor materialisap:737838820.432849
first materialisap:453569070.432621
elementary semiconductorisap:1458955240.432409
other oxideisap:336468260.432002
planar surfaceisap:4313420600.431831
suitable semiconductor substrateisap:3193852900.431140
insulation filmisap:737201850.430848
synthetic rubberisap:2715468930.430641
other elementisap:4295969830.430411
type of materialisap:752828420.430368
surface of the semiconductorisap:4313420590.429413
monocrystalline materialisap:453567990.428918
active materialisap:453567920.428635
various substrateisap:3193853060.426837
inorganic substrateisap:3193852690.426555
various metalisap:363841440.426523
level of trace elementisap:341624620.426134
basic elementisap:4295970180.425414
inorganic powderisap:2715918740.424372
undoped semiconductor materialisap:453568010.424024
thermal coefficient of expansionisap:661851780.422957
conductive layerisap:338380970.422184
transparent materialisap:453567770.421969
carbon nanotubeisap:511004900.421843
compressible materialisap:453570490.421666
polymer dielectricisap:2446667090.421608
skill in the artisap:368839980.421533
stacked-layer structureisap:3210351990.421344
additional materialisap:453568210.421281
conductive filmisap:737202040.420859
monocrystalline semiconductor materialisap:453567750.420650
coating materialisap:453569010.419996
natural resourceisap:511561270.419950
single crystalisap:4290926450.419885
appropriate materialisap:453567360.419450
first semiconductorisap:1458955490.417574
layer of a materialisap:338380760.417370
crystalline structureisap:3210352010.416411
insulation materialisap:453568710.415920
silicon sourceisap:2747236210.415078
key ingredientisap:2435909960.414923
rigid materialisap:453567150.414878
elastic materialisap:453567660.414645
semi-conducting materialisap:453567720.414485
silicon-based compoundisap:486233990.414344
chemical compoundisap:486233970.414201
termisap:752342940.412397
many materialisap:453567590.411632
oxide materialisap:453567950.411552
solid materialisap:453567710.411434
high dielectric constant materialisap:453570510.410311
layer of a semiconductorisap:338380630.410174
amorphous filmisap:737201980.409417
semiconductor substrate 12isap:3193852740.409084
building materialisap:453571110.408985
silica-based materialisap:453567270.408902
rubber materialisap:453569300.408580
good thermal conductorisap:3195502410.408374
electronic deviceisap:2715385520.408236
semiconductive substrateisap:3193852920.408015
nitrogenisap:484148690.407192
first layerisap:338380690.407005
power deviceisap:2715385750.405984
monocrystalline semiconductor bodyisap:737608370.405930
periodic tableisap:347967680.405358
substrate 10isap:3193852700.405064
silicon-based materialisap:453568280.404289
intermediate layerisap:338381360.403804
nonconductive materialisap:453569080.402528
thin filmisap:737201800.402132
substrate 100isap:3193852790.402008
material such as glassisap:453569430.401822
region of semiconductor materialisap:2694073640.400782
alloyisap:391749800.400446
variety of different materialisap:4390096080.400100
surface layerisap:338380840.400060
variety of substrate materialisap:4390096100.399828
single crystal semiconductorisap:1458955260.399803
ceramic waferisap:381431770.399662
common substrate materialisap:453569730.399433
insulation layerisap:338380680.399264
sidewall spacer materialisap:453570590.398922
element in the earth'sisap:4295970010.397630
resilient materialisap:453567560.397318
silicon nitrideisap:4315821510.396964
miscellaneous elementisap:4295970410.396824
deformable materialisap:453568410.395818
other type of materialisap:752828600.395360
device on semiconductor substrateisap:2715385760.395310
semiconductor bodyisap:737608320.394591
crystal structureisap:3210351960.394503
non-metalisap:3172903450.394368
use semiconductor materialisap:453567300.394340
compatible materialisap:453568890.393968
photovoltaic cellisap:738136550.393769
indirect bandgap semiconductorisap:1458955180.393074
suitable dielectricisap:2446667140.392693
semiconductive materialisap:453567180.392167
silicon nitride filmisap:737202140.391398
other nutrientisap:447464810.391029
circuit chipisap:737838860.390254
pliable materialisap:453569210.390236
silicon oxide layerisap:338381470.388033
stable elementisap:4295970290.387872
silicon oxideisap:336468220.387500
optical materialisap:453568820.387232
neutral speciesisap:4309611220.387210
other additiveisap:479681060.386987
material combinationisap:659787190.386521
glass substrateisap:3193852880.386393
variety of materialisap:4390096050.386373
known materialisap:453569140.385717
group iv semiconductorisap:345067930.384854
ceramic fiberisap:319457810.384759
suitable semiconductorisap:1458955500.384235
elemental semiconductor materialisap:453568450.383332
hard maskisap:730889760.381944
semiconductor processisap:4318751210.381911
alloying metalisap:363841520.380905
interlayer insulate layerisap:2454984220.380726
crystal substrateisap:3193853630.380374
amorphous siliconisap:4340368120.380105
solar cellisap:738136530.378350
single crystal materialisap:453568110.378346
reflective materialisap:453567800.377587
plastic materialisap:453568580.375920
damage substrate materialisap:453570330.375913
anti-reflective materialisap:453571760.375681
suitable surfaceisap:4313420570.374292
oxide layerisap:338380620.373450
other semiconductorisap:1458955120.373258
soluble elementisap:4295970160.373083
substrate 22isap:3193853670.372297
alloying constituentisap:656123610.371917
metal oxideisap:336468210.371860
good heat conductorisap:3195502400.371584
particular materialisap:453570440.369728
factorisap:2739412340.369587
important nutrientisap:447464800.369178
dissimilar materialisap:453568070.368330
single crystalline materialisap:453567870.368157
emitter materialisap:453571780.367872
thin metalisap:363841480.367749
steelisap:357905850.367301
silicon dioxideisap:4358772910.366413
number of materialisap:2740678680.366353
silicon oxide filmisap:737202220.365512
thin-film semiconductor materialisap:453571070.364175
appropriate substrateisap:3193852720.362036
thin materialisap:453569510.361549
type of semiconductorisap:752828490.361504
electronicsisap:667500840.361088
carrier substrateisap:3193853090.360882
surface of a semiconductorisap:4313420550.360745
class of materialisap:345176840.360163
memory deviceisap:2715385840.360037
variety of surfaceisap:4390096160.359998
oxide filmisap:737201920.359063
polycrystalline semiconductor materialisap:453570250.358437
opaque substrateisap:3193852670.358413
process-compatible materialisap:453568610.358355
three-dimensional materialisap:453568440.358243
other substrateisap:3193852620.357756
piece of materialisap:326846980.357480
special materialisap:453571880.357192
base layerisap:338380820.356724
porous materialisap:453567970.356429
essential elementisap:4295970340.356344
resourceisap:511561260.355362
same materialisap:453567620.354954
variety of substrateisap:4390096110.354849
different refractive indexisap:390374810.354531
aluminumisap:492715070.354384
suitable metalisap:363841450.353835
barrier materialisap:453569320.352618
undoped semiconductive materialisap:453569370.352500
abundant elementisap:4295969870.352431
semiconductor substrate 1isap:3193852820.352289
group ivisap:565569710.352202
locationisap:473791810.350211
rigid substrateisap:3193852590.349882
conductorisap:3195502350.349585
polysiliconisap:668444230.349513
commercial solar cellisap:738136580.346295
material of interestisap:453571910.346205
silicon alloyisap:391749850.345928
element on earthisap:4295969910.345058
dopant materialisap:453570550.344931
heat cure resinisap:735139640.344913
main componentisap:3160972680.344205
semiconductor layerisap:338380600.343068
ceramic materialisap:453567140.342506
atomisap:740572040.342402
solid objectisap:2678524640.342032
speciesisap:4309611210.342005
dopant atomisap:740572170.341926
filler materialisap:453570180.341554
amorphous semiconductor filmisap:737201780.341017
fieldisap:319792480.340770
manufacture of semiconductor deviceisap:661441550.340488
gallium arsenideisap:450523970.337421
optical fiberisap:319457820.336671
semiconductor chipisap:737838810.336292
flexible materialisap:453567410.336090
metalisap:363841400.336033
beneficial elementisap:4295970090.335163
inert materialisap:453567640.334925
common semiconductorisap:1458955080.334119
vitaminisap:4378240480.333700
microelectronic substrateisap:3193852980.333391
indium phosphideisap:3172213350.333112
indirect semiconductorisap:1458955340.332932
alloy with lithiumisap:391749900.332724
silicon-containing filmisap:737202360.332572
inorganic oxideisap:336468230.332397
semi-conductor materialisap:453567820.331463
certain materialisap:453568030.330947
good conductorisap:3195502360.330125
likeisap:729729910.329795
suitable technologyisap:2428495430.328918
layer 23isap:338380830.328771
anti-reflective coatingisap:4344229560.328734
element of the alloyisap:4295970370.328705
inexpensive materialisap:453568510.327476
thermal oxideisap:336468300.327216
polysilicon layerisap:338381160.326913
second materialisap:453570420.326416
polycrystalline siliconisap:4340368140.326106
bulk materialisap:453568000.325062
metal materialisap:453568740.324721
abundant materialisap:453567880.324106
material for the substrateisap:453569040.323927
dense materialisap:453569420.323920
oxide of a metalisap:336468310.323359
chipisap:737838800.323053
layer on topisap:338381550.322907
common elementisap:4295969930.322854
intrinsic semiconductorisap:1458955610.322762
dielectric layerisap:338380610.321837
aluminum alloyisap:391749810.321786
vital mineralisap:4371929140.321444
nutrientisap:447464790.321404
subsequent stepisap:753499720.321285
inorganic dielectricisap:2446667050.321248
good insulatorisap:3166885360.320670
second groupisap:345068050.320524
conventional etchisap:735815590.319985
oxidizable materialisap:453569250.319066
refractory materialisap:453571080.319023
semi-conductive materialisap:453567910.319008
basic materialisap:453569860.318859
crystalline semiconductorisap:1458955060.318833
new materialisap:453567250.318459
semiconductor elementisap:4295969880.318051
particular semiconductor materialisap:453568840.316799
band-gap materialisap:453568170.316759
essential nutrientisap:447464820.316562
b complexisap:4293713060.315999
substrate 12isap:3193852830.315050
other materialisap:453567100.314228
use material for memisap:453572040.313878
indirect bandgap materialisap:453567610.313473
methodisap:2691024660.313246
aluminum nitrideisap:4315821540.313058
anode materialisap:453567510.312469
layer of semiconductor materialisap:338380730.311749
surface of a substrateisap:4313420560.311565
combination of elementisap:659787210.311421
layerisap:338380590.310037
metal alloyisap:391749870.309807
third elementisap:4295970230.309649
combination of materialisap:659787160.309183
type of insulate substrateisap:752828640.308393
processisap:4318751180.308278
rigid supportisap:4384822710.307188
more elementisap:4295970040.306753
smooth surfaceisap:4313420720.306747
systemisap:2687544750.306256
semiconductor crystalisap:4290926460.305553
residueisap:4289086990.305528
reasonable alternativeisap:672455330.305400
solutionisap:486534490.304454
suitable meansisap:363445670.302309
material for useisap:453568590.302159
interesting materialisap:453570990.301659
use of a semiconductorisap:5091414230.301083
first semiconductor layerisap:338381140.300631
base materialisap:453567760.300627
compositionisap:663219180.300546
wide band gap semiconductorisap:1458955580.299842
limited toisap:565578550.299364
corrosion resistanceisap:2437879260.298449
metal compoundisap:486233930.297900
available solar cellisap:738136600.297742
group iv materialisap:345067940.297020
material in the semiconductorisap:453567980.296962
agentisap:394358980.296234
crystal materialisap:453568980.295635
surfaceisap:4313420530.295302
serial entrepreneurisap:5124100620.295160
impurity elementisap:4295970330.294815
micronutrientisap:1454276690.294579
substrate itselfisap:2741413700.294534
translucent materialisap:453571570.294378
moleculeisap:508568260.293840
abundant material on earthisap:453571840.293747
single-element semiconductorisap:1458955730.293296
use in connectionisap:5091414280.292558
conductor of electricityisap:3195502450.292266
buffer layerisap:338381080.291492
earths crustisap:340979120.290407
polymerisap:4336083810.289858
second elementisap:4295970000.289769
example of a materialisap:4342906550.288897
bonding agentisap:394359010.288438
element find in natureisap:4295970210.288012
other solar cellisap:738136590.287962
ideal materialisap:453567960.287468
organic materialisap:453567860.287275
hard particleisap:515662890.286414
diamondisap:4331398100.286064
workisap:750009440.286040
semiconductor processingisap:2427938060.285241
industryisap:482265950.285185
hard mask materialisap:453568460.284631
other mineralisap:4371929110.284042
barrier layerisap:338380700.284018
other constituentisap:656123590.283570
promising materialisap:453568040.283299
suit materialisap:453569440.282909
use semiconductorisap:1458955320.282728
conductive materialisap:453567120.282594
paraelectric materialisap:453569770.281176
substrate 14isap:3193853650.281080
commercial semiconductorisap:1458955710.280966
quartzisap:2668469560.279777
film materialisap:453571620.279684
elastomerisap:3176192760.279052
fabrication processisap:4318751300.277974
productisap:4315629510.277802
substrate of a semiconductorisap:3193853160.276876
molybdenumisap:2425662210.276380
support substrateisap:3193853020.275976
material compositionisap:663219240.275823
conventional dielectric materialisap:453568060.275786
candidateisap:3172225570.275682
glassisap:343272030.275453
inorganicisap:3183217090.274970
silicaisap:2712057210.273374
waveguideisap:3213854400.272724
metal elementisap:4295969950.272438
lubricantisap:3165311560.270518
transparent dielectricisap:2446667020.270062
maskisap:730889770.270035
diffusion of copperisap:3189423310.269832
alternativelyisap:1452326080.269417
chemicalisap:456665520.268909
doped semiconductor materialisap:453569520.267887
view of a siliconisap:750679100.267521
featureisap:4316128070.267428
thin layerisap:338380930.267406
layer of materialisap:338380790.267311
pure elementisap:4295970050.266980
oxygenisap:2667998920.266242
microfabricationisap:5119609320.265772
applicationisap:673036430.265638
stainless steelisap:357905840.264768
simple materialisap:453568940.263833
presentisap:4294285840.263399
substrate of a materialisap:3193852810.263095
solidisap:371554610.262629
present inventionisap:3197400180.262089
otherisap:339640630.261862
formisap:737084820.261668
polymer materialisap:453571610.261160
concentration of elementisap:1452971420.260907
dielectric filmisap:737201760.260878
amorphous carbonisap:2745611890.260688
substrate 16isap:3193853620.260398
diffusion barrierisap:4311434120.260314
contaminantisap:666340260.260269
rubberisap:2715468940.260118
ironisap:731877370.259820
silverisap:2711785490.259685
use of semiconductor materialisap:5091414160.258723
underlayerisap:2421854190.258583
resinisap:390954290.258425
debrisisap:2757913980.257764
such asisap:565563690.257103
substrate of materialisap:3193853500.257094
ingredientisap:2435909920.256854
stuffisap:358214720.255970
waferisap:381431570.255498
layer of dielectric materialisap:338380780.255219
silicon halideisap:2689815910.254510
mediumisap:2675541570.253701
plasticisap:4342599860.253597
gasisap:5091281960.252996
other impurityisap:514382950.251034
substrate 33isap:3193853560.251008
important materialisap:453568050.250649
preferred substrateisap:3193853320.249801
substrate 30isap:3193853580.249244
inorganic fillerisap:2759089250.249215
siliconeisap:490225340.247849
electronisap:463982430.246268
fig 1aisap:565482140.246136
carbideisap:4362393370.245505
hardwareisap:487473950.245333
solid substrateisap:3193852610.244493
common solar cellisap:738136610.243980
nanowireisap:511759780.243427
gate electrodeisap:3180604030.243191
microcrystalline semiconductor materialisap:453568650.243131
insulationisap:2438867140.243079
use of materialisap:5091414150.243020
element on the planetisap:4295970250.242764
example of materialisap:4342906640.242627
compoundisap:486233890.242615
boronisap:317067380.242372
risap:1243500860.242356
particleisap:515662850.242228
specific embodimentisap:2422923430.241911
adhesiveisap:514685570.241194
interconnectisap:5122691090.241116
common mineralisap:4371929090.240263
wafer substrateisap:3193853250.239978
fig 2isap:5091314290.239738
material of the substrateisap:453570800.239279
hydrogenisap:483271820.238954
n-type impurityisap:514382930.238779
inorganic layerisap:338380800.237700
electrodeisap:3180604050.236982
substrate 20isap:3193853440.236813
wafer 1 of semiconductorisap:381431620.236566
purposeisap:4322284200.234640
alisap:565563430.234090
nonmagnetic materialisap:453569480.233845
moreoverisap:501026030.233725
techniqueisap:3160718120.233439
crystalline semiconductor filmisap:737201770.232756
semi-conductor elementisap:4295970190.232167
silicon structureisap:3210352100.232030
common substrateisap:3193852730.231948
timeisap:752206150.231922
other componentisap:3160972710.231819
case of aluminumisap:738129870.231519
ionisap:5091329790.231429
adjacent materialisap:453571850.231401
donorisap:368469920.231035
caseisap:738129860.230971
formedisap:2665812080.230546
porous siliconisap:4340368320.230225
semi-insulatorisap:1242417940.230144
substrate 21isap:3193853040.230107
additionallyisap:5128717090.230062
aluminium oxideisap:336468280.229959
crystalline bodyisap:737608400.229594
polycrystallineisap:561551300.229560
amorphous semiconductorisap:1458955390.229108
layer of oneisap:338381710.228935
dielectricisap:2446667010.227968
mediaisap:363596950.227923
dopantisap:2714213040.227605
propertyisap:502342840.227458
constituentisap:656123600.226665
graphiteisap:501241960.226648
electronic componentisap:3160972750.226529
substrate 101isap:3193853640.226285
interfaceisap:3174245060.225929
semiconductor thin filmisap:1458955300.223151
equipmentisap:3166687320.221636
group iv elementisap:345067920.221213
itemisap:731821090.220675
platformisap:507430170.220483
available productisap:4315629520.220444
semi-solid supportisap:4384822730.220138
detectorisap:446061160.219785
zirconiumisap:3189021740.219596
stepisap:753499690.219571
simple semiconductorisap:1458955560.219541
quantity of other elementisap:477645710.219486
dieisap:5091669670.218606
room temperatureisap:654545910.218449
layer 13isap:338380720.218313
photodiodeisap:2434870340.218134
aluminum oxideisap:336468250.218078
particularisap:2427489650.217849
nanometerisap:3182806420.217714
damageisap:2729932460.217555
nisap:1243500700.217373
important semiconductorisap:1458955280.216782
testingisap:4331376420.216339
packagingisap:3212680620.216317
many formisap:737084860.215271
firstisap:318989010.215186
supportisap:4384822720.215043
wafer 20 of semiconductorisap:381431700.214946
first substrateisap:3193853300.213486
studyisap:358215460.213255
capacitorisap:3191755860.213121
precursorisap:3205387470.212744
implantisap:4340209670.212038
solderisap:2753219950.211141
nmisap:565571890.211103
cadmiumisap:4318952310.211081
group 14 elementisap:345067960.210999
alsoisap:740360440.210864
semiconductorsisap:1242148660.210608
oilsisap:728951040.210588
multiple layerisap:338381460.210092
wide varietyisap:4390096170.209771
typeisap:752828430.209741
thereforeisap:3186358160.209614
pointisap:335626010.209210
xef2isap:750101590.207489
gelisap:5091289110.207328
scratch resistanceisap:2437879250.206321
bodyisap:737608300.205476
deviceisap:2715385500.205189
groupisap:345067910.205079
firstlyisap:4344637590.204930
non-metallic elementisap:4295970060.204887
n-doped layerisap:338381850.204439
apparatusisap:3192434740.203526
dustisap:735766830.202255
semimetalisap:3199457220.201753
polyarylateisap:666057890.201637
reasonisap:2697124310.201275
rockisap:754286110.201179
indexisap:390374830.200193
present embodimentisap:2422923460.199929
substrate 1isap:3193852680.199875
oneisap:5091437690.198448
operating temperatureisap:654545920.198259
layer 20isap:338381390.198258
deoxidizerisap:2420206330.198170
viscosityisap:3161381360.197579
regionisap:2694073620.196072
barrierisap:4311434110.195510
active regionisap:2694073720.195165
composite materialisap:453569530.195117
respectivelyisap:5122083550.195107
exemplary embodimentisap:2422923470.193380
whiskerisap:4320563240.193209
windowisap:2696684750.192768
accordinglyisap:673355860.192567
hardisap:735008490.191979
brittleisap:4387970850.191125
siisap:565575590.191066
transistorisap:2452604440.190724
allisap:5091775710.190475
environmentisap:650693940.190279
furthermoreisap:648529260.189971
other handisap:735006030.189563
peroxideisap:515997530.188818
circuitisap:4348969060.188753
first filmisap:737202100.188313
mixtureisap:4332956950.188092
targetisap:2746412640.187482
silicone rubberisap:2715468920.185971
problemisap:4318162840.185775
desiredisap:4369258030.185735
fluidisap:323138620.185584
pieceisap:326846930.185036
oxygen atomisap:740572110.184661
strapisap:358286230.183855
memisap:5091269320.182881
ceramicisap:4326611750.182246
generalisap:4288431770.181918
heteroatomisap:2437664310.181853
competitorisap:2442751100.181595
micromachiningisap:1246489340.180429
interlayer insulate filmisap:2454984190.178721
lisap:1243500360.178107
misap:1243500390.177384
holeisap:734431950.176793
photoresistisap:670688280.176640
matrixisap:2711050100.175961
goldisap:733511030.175903
silicideisap:490111910.173583
nanostructureisap:1456809100.172987
binderisap:2680702170.171611
coatingisap:4344229420.169966
sio2isap:753137990.169660
zirconium silicateisap:492960430.168454
fig 1isap:5091314270.166178
nothingisap:4383149630.166078
choiceisap:2691665980.165955
hastalloyisap:3167533250.165953
copperisap:2713425100.165740
artisap:5091726990.165139
leadisap:729575500.164297
waterisap:380998330.163862
etchantisap:4312315920.162897
possibleisap:503215040.162653
inpisap:5091330250.162469
companyisap:4293143610.162304
nanoparticleisap:5122972200.162300
patentisap:2749851670.162270
micronisap:2739890320.160500
substrate 11isap:3193852940.160474
protective coatingisap:4344229430.159968
neverthelessisap:5122477590.158352
substrate 2isap:3193853140.157438
thereafterisap:2421805830.157179
processingisap:2427938070.156730
glueisap:733573390.156488
germaniumisap:3185147730.156186
well-known filmisap:737201810.155994
furtherisap:4312254860.154863
substrate 32isap:3193853260.154630
cellisap:738136540.154462
metal layerisap:338381320.153843
costisap:738004400.152171
coolantisap:4323521350.152013
housingisap:4304898160.150478
nitrideisap:4315821500.149695
sourceisap:2747236180.149075
instanceisap:518674300.148788
productionisap:2441803610.148608
embodiment of the inventionisap:2422923440.148246
emissionisap:505969290.147644
heliumisap:2711562930.147218
alkyl groupisap:345067970.147089
bisap:1243501700.146710
exampleisap:4342906510.146440
oxideisap:336468200.145914
earthisap:403251980.142335
optionallyisap:2424308570.141068
carrierisap:4375935360.139505
carbonisap:2745611880.139403
by-productisap:2447096300.136667
strengthisap:466387760.136325
priceisap:333226290.136156
materialsisap:3199722610.135351
everythingisap:2436200030.133706
anythingisap:478354690.133151
bedisap:5091717130.133060
placeisap:325520970.131474
difference in the coefficientisap:2427068420.131467
human beingisap:320762750.130664
fillerisap:2759089220.126374
resultisap:2710887440.125771
etchisap:735815600.125164
specificallyisap:5120261730.125020
howeverisap:4326877530.125017
rateisap:753974430.124562
patternisap:4351805800.124501
known physical featureisap:4316128080.123731
vaporisap:406803370.123503
fig 5isap:5091314310.123376
lightisap:355931790.123086
developmentisap:670953120.122123
etchingisap:4312130510.121947
varietyisap:4390096060.121927
ialisap:5091323100.121258
membraneisap:462082560.121046
numberisap:2740678690.120948
crustisap:340979110.118602
cobaltisap:2736426320.118282
composition of the adhesiveisap:663219210.117788
pastisap:755746620.117661
defectisap:2753181270.114290
lifeisap:729710340.114267
optionisap:2709224070.114075
inventionisap:3197400190.113670
sampleisap:2681119390.113460
embodimentisap:2422923410.112622
diodeisap:369491230.112271
diaphragmisap:3163689910.111547
objectisap:2678524650.109561
interestisap:509886460.109324
templateisap:462141220.108951
petisap:5091435290.108869
circuitryisap:3206241000.108172
radiationisap:3186094350.103757
meansisap:363445660.103714
aluminaisap:4330640850.103132
conductivityisap:5125438700.101780
restisap:754054130.101540
systemsisap:4327312220.101058
diceisap:739132570.098025
silaneisap:2712277700.097708
oxynitrideisap:2442837190.097279
silicateisap:492960420.096565
siliconisap:4340368090.095293
additionisap:479683610.094739
computerisap:519034910.093368
xisap:1243501010.090807
plusisap:755968090.087954
seriesisap:2729650070.087335
asisap:565563700.086672
thenisap:752449290.085973
courseisap:2723605820.079291
chemistryisap:3212781740.077942
cost of raw materialisap:738004410.077540
kisap:1243500510.075958
rangeisap:387895460.075176
ibmisap:5091323790.074672
bestisap:741073620.065783
containerisap:3173088620.062286
tubeisap:752923510.056713
devilisap:373383630.047149
bookisap:737621210.046996
portionisap:4345487030.032600

Narrower concepts

labelprovenanceconfidence
silicon on insulator sousisap:4340368150.677376
polycrystalline siliconisap:4340368100.646236
wafer bondingisap:4315669180.646135
silicon dioxideisap:4359970960.633104
silicon waferisap:2216246850.567876
single-crystal siliconisap:4340368280.561527
oxygen atomisap:53578330.559228
silicone rubberisap:4442603920.544953
nickel chromiumisap:3466898870.528276
crystalline siliconisap:4340368130.519318
amorphous siliconisap:4340368110.513356
gallium arsenideisap:3416072330.508119
borosilicate glassisap:2313674440.495938
silicon nitrideisap:4307225500.495049
silicon germaniumisap:267660560.489438
silica glassisap:2313674380.481156
silicon carbideisap:4365936970.476573
semiconductor layerisap:2282434330.469502
silicon substrateisap:255121530.468743
stainless steelisap:2266231000.461519
silicon oxideisap:2223371070.460724
silicon layerisap:2282434380.453797
single crystal siliconisap:4340368260.449259
fuse silicaisap:4404041540.428817
germanium geisap:301668730.427728
sigma designisap:4456182920.423045
layer of silicon dioxideisap:2282434340.393623
metal compoundisap:3435543410.379476
semiconductor integrate circuitisap:4778534550.374743
silicon-germanium alloyisap:2278417770.372394
silicic acidisap:21700880.371097
polydimethylsiloxane pdmisap:2355362440.366242
aluminumisap:3411927230.358244
alkali metalisap:2287677420.355697
indium phosphideisap:270125080.355004
zirconiumisap:278988370.333099
silicon oxide filmisap:51731720.331038
conductive materialisap:3453853410.330908
gallium phosphideisap:270125090.329046
silicon-germaniumisap:103443790.325230
gallium arsenide gaaisap:2326043880.320284
metal alloyisap:2278417780.317880
alkoxy groupisap:2307101630.314818
preferred embodimentisap:2178339240.312738
quartzisap:4415847430.310945
goldisap:55434980.309438
aluminaisap:4291268480.308178
targetisap:4452740020.307890
polystyreneisap:1395706320.292203
processorisap:278593930.289819
polyurethaneisap:1098753760.287764
support structureisap:264950790.265075
ceramicisap:4321479120.263353
titaniumisap:3445514200.261767
microcontrollerisap:298671010.261219
electrical insulationisap:2177931660.260872
platinumisap:3418697850.259324
amorphousisap:289457850.258533
dielectric materialisap:3453853400.256097
oxideisap:2223371080.252708
gallium-arsenideisap:2334880040.251693
substrateisap:255121480.251493
tetra methyl ammonium hydroxideisap:290252190.250143
polysiloxaneisap:1103706200.246552
phosphorusisap:2177569210.245996
plasticisap:4316306580.243786
monocrystallineisap:309952700.241206
mgoisap:2326655400.240050
nitrogenisap:3457600100.237782
silicaisap:4404041530.237107
membraneisap:3419095240.229624
germaniumisap:267660550.228918
semiconductorisap:4778534520.227382
polycrystallineisap:303012830.222430
waferisap:2216246840.218093
polysiliconisap:1391998970.213269
conductorisap:263956450.212609
dangling bondisap:89944720.212059
thin filmisap:51731750.211796
sideisap:37554590.210183
other embodimentisap:2178339290.208022
gaasisap:71256610.207387
prefer embodimentisap:2178339360.205078
present inventionisap:284127840.202298
ironisap:23396990.198668
grapheneisap:3406001950.198639
alloyisap:2278417790.193558
conditionisap:242868200.193441
impurityisap:3471903060.193090
refractory metalisap:2287677430.192871
material of the semiconductorisap:3453853580.192754
polymerisap:4329332480.192712
embodiment of the inventionisap:2178339270.190424
sapphireisap:3420884560.189460
silicon surfaceisap:4295654230.186891
siisap:302026970.185070
tinisap:2341307130.182446
dimethiconeisap:1378783180.181872
halogenisap:4295841400.181765
solar cellisap:95558000.181540
semiconductor materialisap:3453853380.181236
bariumisap:4420104820.180958
indiumisap:4483208030.180741
meansisap:2280677650.179439
co-processorisap:1103888370.179356
computerisap:3425547190.174010
spacerisap:4466880300.173474
clayisap:36608550.172657
mixtureisap:4374522570.171238
preferablyisap:2176152900.170398
dspisap:2351617250.167702
areaisap:27020280.167624
potassiumisap:237670940.166913
likeisap:78008260.164151
deviceisap:4435509970.161353
componentisap:276940950.161210
ceriumisap:4490295870.160896
kaolinisap:4452622350.158672
exampleisap:4353546200.158523
boronisap:2273408950.157795
carbonisap:4490995440.156683
etcisap:2363119080.156439
layerisap:2282434310.155323
fiberisap:2286992490.151478
glassisap:2313674360.151474
silaneisap:4432043270.151163
sourceisap:4495251380.146805
sif4isap:27521450.144171
oxygenisap:4409396550.143253
iii-visap:2290141290.142989
molybdenumisap:2174894850.140554
yttriumisap:4318892240.140024
etchantisap:4357073220.139577
sandisap:102217150.138175
lithiumisap:4302015260.136501
tungstenisap:3442659480.131591
partisap:42047210.131158
biosensorisap:256171460.128975
taiwanisap:4487881170.128889
valencyisap:4345180580.128380
hydrogenisap:3435675480.128132
sensorisap:4410726460.123717
aluminiumisap:286107400.120322
itoisap:2320999270.119854
manganeseisap:252668250.119395
processisap:4284152430.118917
materialisap:3453853370.118692
combinationisap:1391638570.118505
surfaceisap:4295654220.116914
descriptionisap:1400006230.112190
groupisap:2307101660.110407
resultisap:4417471110.107700
embodimentisap:2178339230.106677
polyimideisap:262816390.105429
respectivelyisap:1099289790.104431
si3n4isap:2236905710.104268
matrixisap:4453235700.104164
timeisap:44227930.103869
sio2isap:66753040.100927
metalisap:2287677410.100796
unfortunatelyisap:4780955280.100549
insulatorisap:253249230.099621
methodisap:4492866680.098189
respectisap:4308005910.096637
designisap:4456182930.096270
copperisap:4444316590.095620
siliconisap:4340368090.095293
stepisap:31276300.093912
systemisap:4409504180.091042
functionisap:3455040920.090977
misap:2994539730.090916
howeverisap:4331471540.090836
cisap:2995526790.090815
filmisap:51731760.090471
cpusisap:80094240.090015
moreoverisap:3472100290.089075
alsoisap:31906570.088687
biosilisap:4457286910.087269
carbideisap:4365936980.084598
chemicalisap:3413987900.084552
liquidisap:4471314970.083615
technologyisap:2183265490.081483
chromiumisap:3466898860.079678
inventionisap:284127850.078215
chipisap:84403360.076505
structureisap:264950700.073141
needisap:78564860.068170
aisap:2993564680.068130
baseisap:113772420.068065
caseisap:35465680.067414
amountisap:4494980080.059771
weight percentisap:4365386120.056897
silicateisap:3411593110.052401
acidisap:21700890.047990
pisap:2997313030.038291