About: conductive layer

Premodifier: conductive
Head noun: layer

Same concepts

Broader concepts

label	provenance	confidence
layer	isap:370507145	0.881462
more additional layer	isap:370507621	0.827162
functional layer	isap:370507873	0.782902
first conductive layer	isap:370507857	0.745402
more conductive layer	isap:370509218	0.721100
conductive layer	isap:370507230	0.680919
layer of material	isap:370508090	0.676559
example	isap:230836695	0.658006
counter electrode	isap:340264414	0.613959
component	isap:336158744	0.574625
material	isap:293789281	0.570001
portion	isap:227810514	0.569557
electrode	isap:340264396	0.551972
substrate	isap:336237960	0.545298
opening	isap:226156133	0.499711
semiconductor	isap:96668021	0.466315
laminate	isap:291739984	0.452009
coating	isap:228959063	0.403754
art	isap:325785521	0.393419
contact	isap:228576067	0.385720
power	isap:369930509	0.385086
film	isap:199833509	0.384920
structure	isap:337258133	0.373094
device	isap:159958083	0.368857
metal	isap:373956483	0.366624
oxide	isap:368858188	0.330971
region	isap:161039593	0.329666
method	isap:158044471	0.318906
word line	isap:200098754	0.311995
copper	isap:165312913	0.222456
element	isap:221495794	0.141137

Narrower concepts

label	provenance	confidence
gate electrode	isap:13808978	0.914489
copper layer	isap:370507342	0.828113
second conductive layer	isap:370509105	0.808421
layer	isap:370507157	0.803186
first conductive layer	isap:370507841	0.801741
dielectric layer	isap:370507561	0.791238
polysilicon layer	isap:370507216	0.779872
ground layer	isap:370507823	0.772652
intermediate layer	isap:370508262	0.763669
gold layer	isap:370507559	0.760216
doped polycrystalline silicon	isap:33838095	0.757734
metal layer	isap:370507200	0.728661
al layer	isap:370509640	0.718353
doped semiconductor substrate	isap:14004440	0.714722
refractory metal	isap:374720497	0.709974
titanium nitride	isap:36263104	0.707122
doped polysilicon	isap:414083963	0.688723
metal film	isap:85799749	0.681071
conductive layer	isap:370507230	0.680919
bonding pad	isap:467629985	0.669545
seed layer	isap:370507683	0.660066
electrode	isap:13808975	0.634224
metal line	isap:88693982	0.633814
first electrode	isap:13809013	0.621055
conductive member	isap:118218044	0.608766
aluminum foil	isap:90982419	0.605215
metal such as tungsten	isap:374720480	0.598439
plate metal layer	isap:370509260	0.596620
polysilicon	isap:414083957	0.549866
ti	isap:464082079	0.542122
conductive material	isap:360099272	0.530170
indium-tin oxide ito	isap:471220776	0.524990
spacer layer	isap:370507723	0.523234
al	isap:464758981	0.520896
power plane	isap:374782576	0.511031
w	isap:131432361	0.500026
layer 18	isap:370508392	0.497990
side wall	isap:88278003	0.497224
metal	isap:374720455	0.495326
ito	isap:471220772	0.486027
conductive particle	isap:358127430	0.485216
tin	isap:469529101	0.464129
lead	isap:95441050	0.457660
tungsten	isap:360741565	0.437930
metallization	isap:142086859	0.428029
silicon	isap:33838097	0.422184
copper	isap:119954894	0.418327
titanium	isap:359754804	0.405732
cu	isap:465405039	0.403860
aluminum	isap:358513287	0.397450
ground	isap:114702711	0.386448
portion	isap:40110257	0.368100
graphite	isap:358990851	0.366268
embodiment	isap:474052874	0.352170
tantalum	isap:358994220	0.346784
sputtering	isap:475506755	0.342999
like	isap:91212927	0.331264
source	isap:115259993	0.326159
gate	isap:93984671	0.313699
gold	isap:93730563	0.310641
substrate	isap:14004402	0.296346
sidewall	isap:360856269	0.289511
material	isap:360099279	0.254850
region	isap:123813692	0.240820
pattern	isap:37452986	0.224454
example	isap:39989057	0.212165
film	isap:85799707	0.210115
surface	isap:35985446	0.199725
means	isap:368772812	0.198711
line	isap:88693975	0.196943
method	isap:123423972	0.195647
case	isap:87266382	0.176283
vacuum	isap:116184489	0.169552
carbon	isap:121398342	0.159569
thickness	isap:15823542	0.125116
process	isap:36094855	0.043366