Head noun: polysilicon

Same concepts
http://dbpedia.org/resource/Polycrystalline_silicon

Broader concepts

labelprovenanceconfidence
materialisap:4623021930.729418
conductive materialisap:4623021940.649911
semiconductor materialisap:4623021960.613640
flexible materialisap:4623022610.595669
suitable materialisap:4623021970.593942
silicon materialisap:4623022190.581605
gate electrode materialisap:4623022000.571046
conductive layerisap:4140839570.549866
high melting point metalisap:4142724540.534628
filmisap:3566323900.521435
metalisap:4142724510.510819
gate electrodeisap:2773663640.508031
suitable conductive materialisap:4623022010.491116
appropriate conductive materialisap:4623022470.489688
other suitable conductive materialisap:4623022720.481830
first materialisap:4623022100.477871
low resistivity materialisap:4623022870.453079
other materialisap:4623021990.447832
silicon layerisap:4140839600.440657
dielectric materialisap:4623022150.432552
semiconductive materialisap:4623022020.429838
polycrystalline siliconisap:1391999010.429148
appropriate materialisap:4623022170.428647
suitable resistive materialisap:4623022820.426999
base materialisap:4623022110.416657
sacrificial materialisap:4623022080.410421
doped siliconisap:1391998990.409093
amorphous siliconisap:1391999000.406976
silicon-containing layerisap:4140839780.404831
variety of materialisap:1383046730.404056
nonconductive materialisap:4623022950.402483
similar materialisap:4623022400.401440
gate materialisap:4623022030.397594
conductor materialisap:4623022240.392944
polycrystalline semiconductor materialisap:4623022040.392390
metal layerisap:4140839730.385235
single conductive layerisap:4140839690.383882
metal alloyisap:4141214790.377722
refractory metalisap:4142724530.377234
layerisap:4140839580.375356
semiconductor filmisap:3566323940.374109
control gateisap:3566087180.367943
semiconductorisap:1090363250.367917
silicon contain materialisap:1391998980.361597
electrode materialisap:4623022090.359254
first layerisap:4140839610.355231
dielectric layerisap:4140839970.354855
conductorisap:2781570310.344800
raw materialisap:4623022290.342842
gate layerisap:4140839860.340591
silicon nitrideisap:1382352270.338017
known materialisap:4623022990.334044
polysiliconisap:1305277890.329873
layer of a gateisap:4140839960.322141
substanceisap:2779747990.305383
protective layerisap:4140840000.304085
layer of semiconductor materialisap:4140839920.302884
exampleisap:1401911860.271757
artisap:5015694300.256239
metal nitrideisap:1382352290.254538
partisap:3546209250.253137
productisap:1387658960.243543
conductive filmisap:3566323910.239837
surfaceisap:1402047800.235643
componentisap:2778258410.233885
resistorisap:4618252360.223790
siliconisap:1391998970.213269
chinaisap:4149028950.211543
substrateisap:2769309370.207238
firstisap:4157896890.201040
structureisap:2779138640.197841
likeisap:3550295560.193198
deviceisap:1449824400.191922
pisap:235573380.189358
depositionisap:3132034060.180256
conductiveisap:3128368630.178037
formedisap:1443592710.162439
etchedisap:1430761710.159327
typeisap:3556751700.157994
oxideisap:4140289540.134724
silicon dioxideisap:1392299620.107968
spacerisap:1447845820.086099