About: gate electrode

Premodifier: gate
Head noun: electrode

Same concepts

Broader concepts

label	provenance	confidence
conductive layer	isap:13808978	0.914489
semiconductor device structure	isap:352287044	0.798583
structure	isap:352287043	0.751643
thin film transistor	isap:43407078	0.749499
electrode	isap:351566070	0.737619
dielectric layer	isap:13809068	0.729848
electric field	isap:14938170	0.713956
circuit element	isap:27252945	0.706937
gate structure	isap:352287046	0.702251
signal line	isap:147405460	0.701957
metallic electrode	isap:351566343	0.680859
wiring	isap:135164981	0.675707
barrier layer	isap:13808992	0.671014
active device	isap:132038174	0.664917
control electrode	isap:351566328	0.663741
conductive material	isap:411148590	0.609852
semiconductor device	isap:132038045	0.607580
shape	isap:13536002	0.592495
surface of the substrate	isap:26421183	0.582565
double gate structure	isap:352287062	0.579949
voltage	isap:26657462	0.572603
conductor	isap:350949828	0.566979
contact hole	isap:147267571	0.563946
geometry	isap:410293876	0.547109
portion of the substrate	isap:28691599	0.540593
component	isap:353252019	0.535007
semiconductor layer	isap:13808980	0.530267
portion of the semiconductor	isap:28691607	0.520437
present invention	isap:353542895	0.514693
film	isap:147089599	0.505593
gate electrode	isap:351566075	0.497852
substrate	isap:351992304	0.497125
area	isap:149615977	0.495339
silicon substrate	isap:351992348	0.493247
polycrystalline silicon	isap:24339366	0.488725
active layer	isap:13808996	0.485693
capacitor	isap:353511295	0.460828
surface layer	isap:13809072	0.457154
portion	isap:28691591	0.454929
application	isap:712580	0.426562
element	isap:27252927	0.425861
metal	isap:16223284	0.419875
organic thin film transistor	isap:43407093	0.407645
pattern	isap:26472986	0.404601
region	isap:136138417	0.377388
example	isap:28219810	0.371356
method	isap:137805135	0.370835
manner	isap:135002181	0.340775
gate	isap:146980976	0.322748
polysilicon	isap:628328	0.315676
further	isap:25844232	0.293743
spacer	isap:132676973	0.231043
material	isap:411148573	0.221817
ion	isap:487477410	0.215267
layer	isap:13808976	0.192792

Narrower concepts

label	provenance	confidence
polycrystalline silicon	isap:318060410	0.733646
second gate electrode	isap:351566561	0.710654
first electrode	isap:351566108	0.690799
third electrode	isap:351566204	0.689188
drain electrode	isap:351566336	0.688855
drain region	isap:420248918	0.647160
first polysilicon layer	isap:340264480	0.616740
polycrystalline silicon layer	isap:340264468	0.515200
polysilicon	isap:277366364	0.508031
gate electrode	isap:351566075	0.497852
contact hole	isap:291077133	0.490817
channel region	isap:420248912	0.430139
structure	isap:351841699	0.429260
tungsten	isap:184575712	0.414533
present invention	isap:354111334	0.407783
copper	isap:421359763	0.402361
source	isap:421153679	0.382214
layer	isap:340264397	0.356561
drain	isap:335722800	0.287694
part	isap:287879524	0.273712
aluminum	isap:184696392	0.264014
fig	isap:261601361	0.250849
metal	isap:335427462	0.248469
silicon	isap:318060403	0.243191
semiconductor	isap:21762497	0.239974
lithography	isap:277119449	0.235376
further	isap:320936482	0.225484
gate	isap:289696868	0.208952
example	isap:316315041	0.207416
al	isap:98455366	0.195587
state	isap:338177009	0.194268
w	isap:502307181	0.185032