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About:
barrier layer
Premodifier: barrierHead noun: layer
Same concepts
http://dbpedia.org/resource/Diffusion_barrier
Broader concepts
label
provenance
confidence
oxide layer
isap:
370507688
0.843185
dielectric layer
isap:
370508274
0.794375
additional layer
isap:
370507343
0.783215
more layer
isap:
370507909
0.767403
film
isap:
199833494
0.757668
other barrier layer
isap:
370508004
0.751035
present invention
isap:
335566429
0.722270
barrier layer
isap:
370507269
0.711217
laminate
isap:
291739946
0.694913
coating
isap:
228959065
0.688105
other layer
isap:
370507470
0.677067
structure
isap:
337258104
0.663293
layer of material
isap:
370507763
0.628968
layer
isap:
370507135
0.572604
application
isap:
206736028
0.527062
material
isap:
293789275
0.521029
method
isap:
158044485
0.516242
surface
isap:
224555713
0.490443
thin film
isap:
199833604
0.483891
semiconductor
isap:
96668020
0.479534
conductor
isap:
338190676
0.445280
substrate
isap:
336237958
0.432118
area
isap:
199528912
0.431815
step
isap:
197986451
0.424648
metal
isap:
373956503
0.408701
thickness
isap:
336175077
0.407044
insulator
isap:
338288236
0.400524
electrode
isap:
340264394
0.400339
polymer
isap:
224055853
0.388333
oxide
isap:
368858173
0.342527
titanium nitride
isap:
228209881
0.329180
barrier
isap:
229835735
0.279400
nitride
isap:
228209867
0.216933
Narrower concepts
label
provenance
confidence
second barrier layer
isap:
370508866
0.797396
refractory metal
isap:
374720483
0.778668
silicon dioxide
isap:
31864688
0.760488
barrier layer 14
isap:
370510012
0.755306
tantalum nitride
isap:
36263081
0.718275
barrier layer
isap:
370507269
0.711217
aluminum oxide
isap:
371623267
0.709832
nitride tantalum
isap:
358994213
0.703328
aluminum al
isap:
464758990
0.688733
silicon nitride
isap:
36263082
0.683634
gate electrode
isap:
13808992
0.671014
inorganic layer
isap:
370507529
0.670233
tantalum ta
isap:
464868204
0.642862
titanium nitride
isap:
36263093
0.595266
titanium nitride tin
isap:
469529111
0.588529
oxide of silicon
isap:
371623339
0.559479
first barrier layer
isap:
370507715
0.549575
dielectric material
isap:
360099452
0.543406
titanium oxide
isap:
371623463
0.508414
tungsten
isap:
360741567
0.463033
metal element
isap:
40714610
0.460163
nickel
isap:
114983250
0.450277
tantalum
isap:
358994211
0.428591
cerium
isap:
122006203
0.423322
ruthenium
isap:
15485144
0.423031
thickness
isap:
15823522
0.403962
copper
isap:
119954899
0.397338
nus
isap:
467316998
0.390639
tin
isap:
469529099
0.374004
layer
isap:
370507336
0.367132
alumina
isap:
39299799
0.361966
oxide
isap:
371623300
0.352534
w
isap:
131432370
0.351200
ti
isap:
464082071
0.349126
barrier
isap:
39409399
0.346907
titanium
isap:
359754773
0.313202
example
isap:
39989064
0.312389
foil
isap:
90982413
0.312357
film
isap:
85799716
0.296452
metal
isap:
374720458
0.290478
silicon
isap:
33838070
0.284018
silica
isap:
123419725
0.281617
structure
isap:
13236789
0.264920
surface
isap:
35985508
0.258548
ag
isap:
464388309
0.256980
material
isap:
360099239
0.255975
embodiment of the invention
isap:
474052896
0.252783
method
isap:
123423962
0.195006
plastic
isap:
37246930
0.191046
wall
isap:
88277984
0.155166
opening
isap:
38350120
0.141359