About: oxide layer

Premodifier: oxide
Head noun: layer

Same concepts

Broader concepts

label	provenance	confidence
dielectric layer	isap:370507204	0.875133
surface layer	isap:370509314	0.768445
oxide layer	isap:370507193	0.721846
conductive material	isap:293789360	0.719012
semiconductor substrate	isap:336238102	0.691462
insulator layer	isap:370508003	0.680708
layer	isap:370507136	0.642601
contaminant	isap:208093787	0.591529
protective layer	isap:370507988	0.563258
spacer layer	isap:370509038	0.562886
semiconductor device	isap:159958169	0.551924
surface	isap:224555739	0.544959
thickness of a layer	isap:336175090	0.543427
wafer surface	isap:224555738	0.506252
substrate	isap:336238047	0.489224
layer of material	isap:370508498	0.488524
alternatively	isap:96392171	0.479361
insulator	isap:338288235	0.460357
oxide	isap:368858180	0.450719
material	isap:293789285	0.446631
example	isap:230836722	0.445467
layer 26	isap:370509308	0.412824
impurity	isap:292138267	0.344898
method	isap:158044469	0.282054
process	isap:222184677	0.199280
region	isap:161039619	0.110325

Narrower concepts

label	provenance	confidence
barrier layer	isap:370507688	0.843185
aluminum oxide	isap:371623298	0.728848
oxide layer	isap:370507193	0.721846
silicon dioxide	isap:31864684	0.673053
silicon oxide	isap:371623297	0.624217
silicon dioxide layer	isap:370507299	0.529344
semiconductor wafer	isap:369260582	0.493718
thermal oxidation	isap:12215090	0.476763
oxide	isap:371623257	0.415928
layer	isap:370507161	0.378644
silicon	isap:33838062	0.373450
material	isap:360099469	0.301273
region	isap:123813736	0.268228
time	isap:92692899	0.252339
manganese	isap:14340104	0.248492
sio2	isap:85368922	0.209250
metal	isap:374720512	0.205796
p	isap:131251756	0.146654
tio2	isap:92760374	0.112459