About: semiconductor substrate

Premodifier: semiconductor
Head noun: substrate

Same concepts

Broader concepts

label	provenance	confidence
single crystal semiconductor substrate	isap:353357354	0.815445
object	isap:137579381	0.804563
metal substrate	isap:353356980	0.803315
semiconductor substrate	isap:353356703	0.781186
first semiconductor substrate	isap:353357287	0.777318
semiconductor body	isap:148800062	0.759039
surface of a substrate	isap:26400655	0.755114
metal oxide layer	isap:14004362	0.752731
member	isap:134795353	0.752570
electronic component	isap:353751906	0.732654
semiconductor structure	isap:353508048	0.727535
soi substrate	isap:353356732	0.717571
suitable substrate	isap:353356783	0.713528
surface	isap:26400637	0.697309
semiconductor chip	isap:148728261	0.656141
material	isap:410246766	0.633006
material layer	isap:14004431	0.632925
monocrystalline silicon	isap:25512155	0.625491
substrate	isap:353356684	0.621487
semiconductor material	isap:410246835	0.583342
semiconductor device	isap:132251084	0.582215
silicon-on-insulator sous substrate	isap:353357303	0.581130
sic substrate	isap:353357007	0.561164
type of substrate	isap:150382683	0.552996
semiconductor	isap:507462331	0.549485
embodiment	isap:43325367	0.545071
furthermore	isap:423594	0.537417
device	isap:132251096	0.534762
present invention	isap:354301658	0.532558
workpiece	isap:350842193	0.522113
article	isap:26472533	0.520983
semiconductor integrate circuit device	isap:507462333	0.515917
surface of a workpiece	isap:26400687	0.514652
structure	isap:353508043	0.509837
substrate 1	isap:353356955	0.508395
layer	isap:14004368	0.490612
feature	isap:28574768	0.484517
wafer	isap:15880862	0.463310
provided	isap:409598865	0.461008
region	isap:134335478	0.448579
part	isap:150641033	0.434989
embodiment of a semiconductor	isap:43325369	0.430445
means	isap:12855371	0.409446
method	isap:135529301	0.387788
figs 1	isap:148525093	0.384810
film	isap:148525431	0.382110
silicon wafer	isap:15880855	0.365212
thin film	isap:148525445	0.358577
portion	isap:26279763	0.330640
example	isap:26680261	0.329423
test structure	isap:353508074	0.232412

Narrower concepts

label	provenance	confidence
silicon monocrystalline substrate	isap:353356947	0.847807
single crystal silicon	isap:319385265	0.826443
silicon carbide substrate	isap:353356905	0.825179
sapphire substrate	isap:353357319	0.818860
semiconductor substrate 10	isap:353357607	0.797099
silicon substrate 12	isap:353357029	0.796803
compound semiconductor	isap:21724794	0.795754
silicon substrate	isap:353356687	0.794697
semiconductor substrate	isap:353356703	0.781186
metal substrate	isap:353356842	0.779085
silicon wafer	isap:337963168	0.776774
inp substrate	isap:353357070	0.773080
diffusion region	isap:425008264	0.763287
silicon substrate 11	isap:353357051	0.759397
semiconductor wafer	isap:337963171	0.757395
semiconductor material	isap:185890472	0.753892
gallium arsenide substrate	isap:353356839	0.749348
silicon germanium	isap:352494800	0.744220
single crystal	isap:318426671	0.743388
main surface	isap:318206984	0.737141
monocrystalline silicon substrate	isap:353356820	0.735769
monocrystalline silicon	isap:319385286	0.735167
crystal silicon	isap:319385271	0.729838
process chamber	isap:320585856	0.721370
wiring substrate	isap:353356909	0.718400
n-type silicon substrate	isap:353357268	0.715778
first substrate	isap:353356825	0.715516
soi silicon on insulator	isap:319385399	0.715376
soi substrate	isap:353356737	0.713156
si substrate	isap:353356718	0.696209
gaa substrate	isap:353357208	0.696110
si wafer	isap:337963245	0.694892
oxide layer	isap:336238102	0.691462
silicon dioxide	isap:320626302	0.677302
si	isap:97613078	0.674391
print circuit board	isap:334813051	0.655931
trench isolation	isap:351782152	0.655264
polycrystalline silicon	isap:319385307	0.645506
silicon-on-insulator sous	isap:287043354	0.645478
semiconductor layer	isap:336237969	0.644278
electronic component	isap:350980716	0.641718
semiconductor device	isap:425210262	0.630984
semiconductor film	isap:288881401	0.630469
active region	isap:425008192	0.630078
first surface	isap:318206989	0.629189
drain region	isap:425008196	0.608326
first electrode	isap:351992362	0.597917
seed layer	isap:336238133	0.597106
dioxide silicon oxy)nitride	isap:277308063	0.584115
base layer	isap:336238170	0.583075
other material	isap:185890468	0.582906
gallium arsenide	isap:186508508	0.580077
single-crystal silicon	isap:319385311	0.573468
contact hole	isap:285403589	0.543392
silicon	isap:319385257	0.542414
silicon si	isap:97613081	0.535813
gallium arsenide gaa	isap:264271090	0.508475
second transistor	isap:193195220	0.504253
germanium	isap:352494797	0.495457
semiconductor	isap:21724774	0.486144
present invention	isap:352455272	0.481345
glass	isap:337149416	0.477065
manufacturing method	isap:420534351	0.473275
structure	isap:353957152	0.461601
gallium nitride	isap:316107196	0.460783
interlayer insulate film	isap:191958007	0.457148
doped silicon	isap:319385321	0.455316
chip	isap:290280997	0.448274
layer	isap:336237956	0.433531
charge	isap:423315347	0.432124
silicon on insulator sous	isap:319385319	0.407297
diffusion	isap:352531412	0.396333
circuit	isap:317687305	0.392023
germanium ge	isap:98433297	0.374252
cmo	isap:263645922	0.368778
wafer	isap:337963169	0.366068
film	isap:288881380	0.351741
plurality	isap:351270361	0.351324
surface	isap:318206969	0.346813
photodiode	isap:191997176	0.340141
gaas	isap:289920181	0.337849
base	isap:285398740	0.336588
body	isap:285911113	0.334706
step	isap:288379111	0.328070
pad	isap:263392623	0.321893
substrate	isap:353356686	0.316532
transistor	isap:193195211	0.316065
like	isap:288195953	0.311967
trench	isap:422092008	0.311156
power	isap:338262906	0.307180
gate	isap:285489116	0.305521
source	isap:421269629	0.302281
device	isap:425210278	0.299632
example	isap:320474963	0.297071
member	isap:424467281	0.294962
soi	isap:263707134	0.289730
method	isap:420534331	0.289432
area	isap:286196028	0.286754
etc	isap:262991389	0.284002
region	isap:425008185	0.279296
gate insulate film	isap:285489119	0.279127
process	isap:316110779	0.272621
gaa	isap:264271086	0.269060
cmos	isap:289842977	0.248477
however	isap:316163405	0.233036
aluminum	isap:184963575	0.232839
resistor	isap:185106854	0.224359
apparatus	isap:352643393	0.220617
sample	isap:424322952	0.174575
material	isap:185890476	0.146054