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About:
semiconductor substrate
Premodifier: semiconductorHead noun: substrate
Same concepts
Broader concepts
label
provenance
confidence
single crystal semiconductor substrate
isap:
353357354
0.815445
object
isap:
137579381
0.804563
metal substrate
isap:
353356980
0.803315
semiconductor substrate
isap:
353356703
0.781186
first semiconductor substrate
isap:
353357287
0.777318
semiconductor body
isap:
148800062
0.759039
surface of a substrate
isap:
26400655
0.755114
metal oxide layer
isap:
14004362
0.752731
member
isap:
134795353
0.752570
electronic component
isap:
353751906
0.732654
semiconductor structure
isap:
353508048
0.727535
soi substrate
isap:
353356732
0.717571
suitable substrate
isap:
353356783
0.713528
surface
isap:
26400637
0.697309
semiconductor chip
isap:
148728261
0.656141
material
isap:
410246766
0.633006
material layer
isap:
14004431
0.632925
monocrystalline silicon
isap:
25512155
0.625491
substrate
isap:
353356684
0.621487
semiconductor material
isap:
410246835
0.583342
semiconductor device
isap:
132251084
0.582215
silicon-on-insulator sous substrate
isap:
353357303
0.581130
sic substrate
isap:
353357007
0.561164
type of substrate
isap:
150382683
0.552996
semiconductor
isap:
507462331
0.549485
embodiment
isap:
43325367
0.545071
furthermore
isap:
423594
0.537417
device
isap:
132251096
0.534762
present invention
isap:
354301658
0.532558
workpiece
isap:
350842193
0.522113
article
isap:
26472533
0.520983
semiconductor integrate circuit device
isap:
507462333
0.515917
surface of a workpiece
isap:
26400687
0.514652
structure
isap:
353508043
0.509837
substrate 1
isap:
353356955
0.508395
layer
isap:
14004368
0.490612
feature
isap:
28574768
0.484517
wafer
isap:
15880862
0.463310
provided
isap:
409598865
0.461008
region
isap:
134335478
0.448579
part
isap:
150641033
0.434989
embodiment of a semiconductor
isap:
43325369
0.430445
means
isap:
12855371
0.409446
method
isap:
135529301
0.387788
figs 1
isap:
148525093
0.384810
film
isap:
148525431
0.382110
silicon wafer
isap:
15880855
0.365212
thin film
isap:
148525445
0.358577
portion
isap:
26279763
0.330640
example
isap:
26680261
0.329423
test structure
isap:
353508074
0.232412
Narrower concepts
label
provenance
confidence
silicon monocrystalline substrate
isap:
353356947
0.847807
single crystal silicon
isap:
319385265
0.826443
silicon carbide substrate
isap:
353356905
0.825179
sapphire substrate
isap:
353357319
0.818860
semiconductor substrate 10
isap:
353357607
0.797099
silicon substrate 12
isap:
353357029
0.796803
compound semiconductor
isap:
21724794
0.795754
silicon substrate
isap:
353356687
0.794697
semiconductor substrate
isap:
353356703
0.781186
metal substrate
isap:
353356842
0.779085
silicon wafer
isap:
337963168
0.776774
inp substrate
isap:
353357070
0.773080
diffusion region
isap:
425008264
0.763287
silicon substrate 11
isap:
353357051
0.759397
semiconductor wafer
isap:
337963171
0.757395
semiconductor material
isap:
185890472
0.753892
gallium arsenide substrate
isap:
353356839
0.749348
silicon germanium
isap:
352494800
0.744220
single crystal
isap:
318426671
0.743388
main surface
isap:
318206984
0.737141
monocrystalline silicon substrate
isap:
353356820
0.735769
monocrystalline silicon
isap:
319385286
0.735167
crystal silicon
isap:
319385271
0.729838
process chamber
isap:
320585856
0.721370
wiring substrate
isap:
353356909
0.718400
n-type silicon substrate
isap:
353357268
0.715778
first substrate
isap:
353356825
0.715516
soi silicon on insulator
isap:
319385399
0.715376
soi substrate
isap:
353356737
0.713156
si substrate
isap:
353356718
0.696209
gaa substrate
isap:
353357208
0.696110
si wafer
isap:
337963245
0.694892
oxide layer
isap:
336238102
0.691462
silicon dioxide
isap:
320626302
0.677302
si
isap:
97613078
0.674391
print circuit board
isap:
334813051
0.655931
trench isolation
isap:
351782152
0.655264
polycrystalline silicon
isap:
319385307
0.645506
silicon-on-insulator sous
isap:
287043354
0.645478
semiconductor layer
isap:
336237969
0.644278
electronic component
isap:
350980716
0.641718
semiconductor device
isap:
425210262
0.630984
semiconductor film
isap:
288881401
0.630469
active region
isap:
425008192
0.630078
first surface
isap:
318206989
0.629189
drain region
isap:
425008196
0.608326
first electrode
isap:
351992362
0.597917
seed layer
isap:
336238133
0.597106
dioxide silicon oxy)nitride
isap:
277308063
0.584115
base layer
isap:
336238170
0.583075
other material
isap:
185890468
0.582906
gallium arsenide
isap:
186508508
0.580077
single-crystal silicon
isap:
319385311
0.573468
contact hole
isap:
285403589
0.543392
silicon
isap:
319385257
0.542414
silicon si
isap:
97613081
0.535813
gallium arsenide gaa
isap:
264271090
0.508475
second transistor
isap:
193195220
0.504253
germanium
isap:
352494797
0.495457
semiconductor
isap:
21724774
0.486144
present invention
isap:
352455272
0.481345
glass
isap:
337149416
0.477065
manufacturing method
isap:
420534351
0.473275
structure
isap:
353957152
0.461601
gallium nitride
isap:
316107196
0.460783
interlayer insulate film
isap:
191958007
0.457148
doped silicon
isap:
319385321
0.455316
chip
isap:
290280997
0.448274
layer
isap:
336237956
0.433531
charge
isap:
423315347
0.432124
silicon on insulator sous
isap:
319385319
0.407297
diffusion
isap:
352531412
0.396333
circuit
isap:
317687305
0.392023
germanium ge
isap:
98433297
0.374252
cmo
isap:
263645922
0.368778
wafer
isap:
337963169
0.366068
film
isap:
288881380
0.351741
plurality
isap:
351270361
0.351324
surface
isap:
318206969
0.346813
photodiode
isap:
191997176
0.340141
gaas
isap:
289920181
0.337849
base
isap:
285398740
0.336588
body
isap:
285911113
0.334706
step
isap:
288379111
0.328070
pad
isap:
263392623
0.321893
substrate
isap:
353356686
0.316532
transistor
isap:
193195211
0.316065
like
isap:
288195953
0.311967
trench
isap:
422092008
0.311156
power
isap:
338262906
0.307180
gate
isap:
285489116
0.305521
source
isap:
421269629
0.302281
device
isap:
425210278
0.299632
example
isap:
320474963
0.297071
member
isap:
424467281
0.294962
soi
isap:
263707134
0.289730
method
isap:
420534331
0.289432
area
isap:
286196028
0.286754
etc
isap:
262991389
0.284002
region
isap:
425008185
0.279296
gate insulate film
isap:
285489119
0.279127
process
isap:
316110779
0.272621
gaa
isap:
264271086
0.269060
cmos
isap:
289842977
0.248477
however
isap:
316163405
0.233036
aluminum
isap:
184963575
0.232839
resistor
isap:
185106854
0.224359
apparatus
isap:
352643393
0.220617
sample
isap:
424322952
0.174575
material
isap:
185890476
0.146054