Premodifier: semiconductor
Head noun: substrate

Same concepts

Broader concepts

labelprovenanceconfidence
single crystal semiconductor substrateisap:3533573540.815445
objectisap:1375793810.804563
metal substrateisap:3533569800.803315
semiconductor substrateisap:3533567030.781186
first semiconductor substrateisap:3533572870.777318
semiconductor bodyisap:1488000620.759039
surface of a substrateisap:264006550.755114
metal oxide layerisap:140043620.752731
memberisap:1347953530.752570
electronic componentisap:3537519060.732654
semiconductor structureisap:3535080480.727535
soi substrateisap:3533567320.717571
suitable substrateisap:3533567830.713528
surfaceisap:264006370.697309
semiconductor chipisap:1487282610.656141
materialisap:4102467660.633006
material layerisap:140044310.632925
monocrystalline siliconisap:255121550.625491
substrateisap:3533566840.621487
semiconductor materialisap:4102468350.583342
semiconductor deviceisap:1322510840.582215
silicon-on-insulator sous substrateisap:3533573030.581130
sic substrateisap:3533570070.561164
type of substrateisap:1503826830.552996
semiconductorisap:5074623310.549485
embodimentisap:433253670.545071
furthermoreisap:4235940.537417
deviceisap:1322510960.534762
present inventionisap:3543016580.532558
workpieceisap:3508421930.522113
articleisap:264725330.520983
semiconductor integrate circuit deviceisap:5074623330.515917
surface of a workpieceisap:264006870.514652
structureisap:3535080430.509837
substrate 1isap:3533569550.508395
layerisap:140043680.490612
featureisap:285747680.484517
waferisap:158808620.463310
providedisap:4095988650.461008
regionisap:1343354780.448579
partisap:1506410330.434989
embodiment of a semiconductorisap:433253690.430445
meansisap:128553710.409446
methodisap:1355293010.387788
figs 1isap:1485250930.384810
filmisap:1485254310.382110
silicon waferisap:158808550.365212
thin filmisap:1485254450.358577
portionisap:262797630.330640
exampleisap:266802610.329423
test structureisap:3535080740.232412

Narrower concepts

labelprovenanceconfidence
silicon monocrystalline substrateisap:3533569470.847807
single crystal siliconisap:3193852650.826443
silicon carbide substrateisap:3533569050.825179
sapphire substrateisap:3533573190.818860
semiconductor substrate 10isap:3533576070.797099
silicon substrate 12isap:3533570290.796803
compound semiconductorisap:217247940.795754
silicon substrateisap:3533566870.794697
semiconductor substrateisap:3533567030.781186
metal substrateisap:3533568420.779085
silicon waferisap:3379631680.776774
inp substrateisap:3533570700.773080
diffusion regionisap:4250082640.763287
silicon substrate 11isap:3533570510.759397
semiconductor waferisap:3379631710.757395
semiconductor materialisap:1858904720.753892
gallium arsenide substrateisap:3533568390.749348
silicon germaniumisap:3524948000.744220
single crystalisap:3184266710.743388
main surfaceisap:3182069840.737141
monocrystalline silicon substrateisap:3533568200.735769
monocrystalline siliconisap:3193852860.735167
crystal siliconisap:3193852710.729838
process chamberisap:3205858560.721370
wiring substrateisap:3533569090.718400
n-type silicon substrateisap:3533572680.715778
first substrateisap:3533568250.715516
soi silicon on insulatorisap:3193853990.715376
soi substrateisap:3533567370.713156
si substrateisap:3533567180.696209
gaa substrateisap:3533572080.696110
si waferisap:3379632450.694892
oxide layerisap:3362381020.691462
silicon dioxideisap:3206263020.677302
siisap:976130780.674391
print circuit boardisap:3348130510.655931
trench isolationisap:3517821520.655264
polycrystalline siliconisap:3193853070.645506
silicon-on-insulator sousisap:2870433540.645478
semiconductor layerisap:3362379690.644278
electronic componentisap:3509807160.641718
semiconductor deviceisap:4252102620.630984
semiconductor filmisap:2888814010.630469
active regionisap:4250081920.630078
first surfaceisap:3182069890.629189
drain regionisap:4250081960.608326
first electrodeisap:3519923620.597917
seed layerisap:3362381330.597106
dioxide silicon oxy)nitrideisap:2773080630.584115
base layerisap:3362381700.583075
other materialisap:1858904680.582906
gallium arsenideisap:1865085080.580077
single-crystal siliconisap:3193853110.573468
contact holeisap:2854035890.543392
siliconisap:3193852570.542414
silicon siisap:976130810.535813
gallium arsenide gaaisap:2642710900.508475
second transistorisap:1931952200.504253
germaniumisap:3524947970.495457
semiconductorisap:217247740.486144
present inventionisap:3524552720.481345
glassisap:3371494160.477065
manufacturing methodisap:4205343510.473275
structureisap:3539571520.461601
gallium nitrideisap:3161071960.460783
interlayer insulate filmisap:1919580070.457148
doped siliconisap:3193853210.455316
chipisap:2902809970.448274
layerisap:3362379560.433531
chargeisap:4233153470.432124
silicon on insulator sousisap:3193853190.407297
diffusionisap:3525314120.396333
circuitisap:3176873050.392023
germanium geisap:984332970.374252
cmoisap:2636459220.368778
waferisap:3379631690.366068
filmisap:2888813800.351741
pluralityisap:3512703610.351324
surfaceisap:3182069690.346813
photodiodeisap:1919971760.340141
gaasisap:2899201810.337849
baseisap:2853987400.336588
bodyisap:2859111130.334706
stepisap:2883791110.328070
padisap:2633926230.321893
substrateisap:3533566860.316532
transistorisap:1931952110.316065
likeisap:2881959530.311967
trenchisap:4220920080.311156
powerisap:3382629060.307180
gateisap:2854891160.305521
sourceisap:4212696290.302281
deviceisap:4252102780.299632
exampleisap:3204749630.297071
memberisap:4244672810.294962
soiisap:2637071340.289730
methodisap:4205343310.289432
areaisap:2861960280.286754
etcisap:2629913890.284002
regionisap:4250081850.279296
gate insulate filmisap:2854891190.279127
processisap:3161107790.272621
gaaisap:2642710860.269060
cmosisap:2898429770.248477
howeverisap:3161634050.233036
aluminumisap:1849635750.232839
resistorisap:1851068540.224359
apparatusisap:3526433930.220617
sampleisap:4243229520.174575
materialisap:1858904760.146054