Premodifier: polycrystallineHead noun: silicon
Same concepts |
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http://dbpedia.org/resource/Polycrystalline_silicon |
Broader concepts
label | provenance | confidence |
---|---|---|
conductive material | isap:45356731 | 0.912264 |
suitable material | isap:45356863 | 0.818154 |
material | isap:45356716 | 0.786451 |
semiconductor layer | isap:33838111 | 0.758925 |
other material | isap:45356823 | 0.751262 |
gate electrode | isap:318060410 | 0.733646 |
polycrystalline silicon | isap:434036823 | 0.725909 |
semiconductor | isap:145895509 | 0.711497 |
semiconductor material | isap:45356748 | 0.708337 |
layer | isap:33838074 | 0.673726 |
silicon | isap:434036810 | 0.646236 |
polycrystalline semiconductor | isap:145895520 | 0.645723 |
semiconductor substrate | isap:319385307 | 0.645506 |
thin film transistor | isap:245260446 | 0.609161 |
film | isap:73720184 | 0.514563 |
conductor | isap:319550244 | 0.511734 |
process | isap:431875119 | 0.477267 |
method | isap:269102469 | 0.457148 |
materials | isap:319972263 | 0.433230 |
fuse | isap:73688117 | 0.418598 |
metal | isap:36384147 | 0.416273 |
Narrower concepts
label | provenance | confidence |
---|---|---|
polycrystalline silicon | isap:434036823 | 0.725909 |
tungsten silicide | isap:343169738 | 0.704106 |
silicon nitride | isap:430722554 | 0.536224 |
gate electrode | isap:24339366 | 0.488725 |
silicon layer | isap:228243437 | 0.454873 |
polysilicon | isap:139199901 | 0.429148 |
silicon | isap:434036814 | 0.326106 |
method | isap:449286669 | 0.250541 |
metal | isap:228767745 | 0.206173 |
material | isap:345385339 | 0.146170 |
crystallinity | isap:478125771 | 0.132608 |