Premodifier: drainHead noun: region
Same concepts |
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Broader concepts
label | provenance | confidence |
---|---|---|
impurity region | isap:391163598 | 0.781096 |
substrate region | isap:391164074 | 0.778309 |
active region | isap:391163711 | 0.772141 |
integrate circuit device | isap:385697096 | 0.756336 |
semiconductor device structure | isap:424455873 | 0.721431 |
semiconductor device | isap:385697081 | 0.710571 |
doped region | isap:391164203 | 0.653560 |
gate electrode | isap:420248918 | 0.647160 |
impurity diffusion region | isap:391164338 | 0.627628 |
area | isap:489816991 | 0.614793 |
portion | isap:441197652 | 0.614184 |
semiconductor substrate | isap:425008196 | 0.608326 |
diffusion region | isap:391163669 | 0.570734 |
thin-film transistor | isap:18126969 | 0.561351 |
region | isap:391163659 | 0.530647 |
drain | isap:115983719 | 0.527008 |
substrate | isap:425008199 | 0.483527 |
transistor | isap:18126925 | 0.428453 |
structure | isap:424455957 | 0.410878 |
problem | isap:440478395 | 0.394901 |
method | isap:387762042 | 0.363613 |
source | isap:396739938 | 0.346943 |
layer | isap:123813693 | 0.318980 |
example | isap:439564876 | 0.310633 |
pattern | isap:440406109 | 0.284068 |
Narrower concepts
label | provenance | confidence |
---|---|---|
source region | isap:391163715 | 0.721853 |
impurity region | isap:391163989 | 0.676699 |
channel region | isap:391163614 | 0.548043 |
channel formation region | isap:391163973 | 0.524371 |
other hand | isap:307313172 | 0.394157 |
drain | isap:153912804 | 0.294268 |
memory cell | isap:302793992 | 0.288002 |
portion | isap:273973158 | 0.207683 |
gate | isap:308113335 | 0.203896 |