Premodifier: memory
Head noun: cell

Same concepts
http://dbpedia.org/resource/Memory_cell

Broader concepts

labelprovenanceconfidence
circuit elementisap:33176730.854238
deviceisap:3051038290.842206
elementisap:33176500.802607
memory arrayisap:868656830.769082
semiconductor deviceisap:3051038240.758016
semiconductor integrate circuitisap:419010060.756474
integrate circuit deviceisap:3051040020.731233
integrate circuitisap:56298280.728570
electronic deviceisap:3051039420.725298
memory cell arrayisap:868656810.699699
cellisap:1714974800.695543
nonvolatile memoryisap:3055721220.682754
storage deviceisap:3051038420.679369
storage circuitisap:56298650.669106
microelectronic deviceisap:3051039980.661301
nand cellisap:1714980800.659281
more memory cellisap:1714995480.652732
non-volatile memory deviceisap:3051038470.641804
embodimentisap:1878104830.641677
word lineisap:1689019110.631784
integrated circuitisap:56298380.627968
circuitisap:56298290.613917
flash eepromisap:3004152760.612104
static random access memoryisap:3055721290.610612
type of memory cellisap:1698412420.601474
nonvolatile memory cellisap:1714976110.601308
applicationisap:4195606930.589121
memory cellisap:1714972840.581210
componentisap:2884552550.577732
non-volatile memoryisap:3055721240.576593
select word lineisap:1689020020.576526
control gateisap:1694381480.574311
non-selected memory cellisap:1714997800.572389
dummy memory cellisap:1714999710.571602
memory array of figisap:868656880.571081
unselected memory cellisap:1714996540.569919
ferroelectric memory deviceisap:3051039380.562308
portionisap:92894250.548065
flash eeprom memory cellisap:1714989870.547588
defective memory cellisap:1714998680.544434
charge trapping memory cellisap:1714979590.542778
problemisap:74198340.540872
mtjisap:1248133020.534497
semiconductor memoryisap:3055721250.527107
structureisap:2861451680.518386
nonvolatile memory arrayisap:868656870.512760
vertical memory cellisap:1714996340.511478
plurality of memory cellisap:2879127300.502181
memory systemisap:3025217720.500939
peripheral circuitisap:56298330.500206
view of a portionisap:1674226100.493645
flash memory cellisap:1714978500.490563
non-volatile memory cellisap:1714977680.489812
circuit diagramisap:115934350.479245
memory blockisap:901196460.478402
logicisap:952479950.474691
unitisap:1696612170.472464
power consumptionisap:4176108040.471170
meansisap:908646390.467604
memory stringisap:3003756250.454030
mannerisap:3023077750.453826
type of t cellisap:1698413170.453054
memory storage deviceisap:3051039110.443635
consolidated deviceisap:3051038680.434335
gateisap:1694381450.429634
mo transistorisap:1900142170.427701
memory deviceisap:3051038190.427047
benefitisap:92970390.425589
sram cellisap:1714983530.424409
dram cellisap:1714986080.424105
storageisap:55860580.419581
datumisap:953138570.418150
electronic circuitisap:56298370.415327
areaisap:1718339580.407942
semiconductor memory deviceisap:3051038270.403616
present inventionisap:2857832240.401308
memoryisap:3055721200.399585
pageisap:1702128180.397938
field effect transistorisap:1900142200.392228
test modeisap:1704664670.377259
lineisap:1689019270.371430
arrayisap:868656840.369302
diodeisap:963413400.364323
transistorisap:1900142150.343387
eepromisap:3004152740.340319
fig 1isap:1248686230.329180
signalisap:3044666620.326844
wordisap:1675267910.325937
methodisap:3049611810.320895
logic 1isap:952479940.320320
functionisap:4614963010.312281
pluralityisap:2879127370.312187
moreoverisap:4561180460.303572
howeverisap:62974740.303074
columnisap:3049006420.302903
sramisap:1699587100.298354
otherisap:860221520.298186
partisap:1702136480.292184
drain regionisap:3027939920.288002
numberisap:3081618220.286808
threshold voltageisap:81290500.282243
typeisap:1698413550.279187
groupisap:930573160.277749
exampleisap:107884460.273377
memory system of claimisap:3025219420.270275
stateisap:898174890.266381
line blisap:5150216710.260683
dramisap:1696224730.260574
thusisap:1697798570.254241
rowisap:1247963610.248914
internal circuitisap:56298680.245826
test pattern signalisap:3044666710.239834
systemisap:3025217780.232468
operationisap:2900778880.229522
advantageisap:2909865910.226708
test patternisap:83037720.206204
test datumisap:953138580.192758
informationisap:4167781440.192305
consequentlyisap:3137409570.187850
test pulseisap:947044870.184856
voltageisap:81290480.160275
outputisap:3008099580.154596
useisap:1248310920.143610
inventionisap:2857832270.127609
techniqueisap:2890064330.119655
errorisap:874954880.106594
processisap:73424270.104657

Narrower concepts

labelprovenanceconfidence
semiconductor memoryisap:4966662810.838493
phase change memory cellisap:1714986630.809569
ferroelectric memoryisap:4966662920.773846
field effect transistorisap:5035575290.760802
dram memory cellisap:1714981020.756327
flash memoryisap:4966662750.753335
flash memory cellisap:1714977390.752457
second memory cellisap:1714983490.695410
random access memoryisap:4966662840.688245
memory cell m1isap:3343059790.675741
storage elementisap:803475390.673035
control gateisap:1795625160.668386
memory cell 12isap:1714986420.660412
bias arrangementisap:3557472760.659737
memory deviceisap:4897710760.657141
select memory cellisap:1714975640.647926
fuseisap:1686017860.647395
memory cell mcisap:3328530910.640934
non-volatile memory cellisap:1714985490.634650
word lineisap:1663958960.606156
dram cellisap:1714995080.605193
cellisap:1714977130.594038
thin film transistorisap:5035575540.587437
memory cellisap:1714972840.581210
read operationisap:1494782210.580222
stack structureisap:1495303670.559701
memory cell mc11isap:1662732790.559162
sense amplifierisap:1480147020.534603
memory cell arrayisap:2044084530.520206
methodisap:4916794010.514199
t cellisap:1714997260.504723
plurality of memory cellisap:1492499880.497486
sramisap:1679047330.478940
access memory dram cellisap:1714993910.477854
eepromisap:4963827710.472753
configurationisap:1461638810.459478
mo transistorisap:5035575300.454619
gateisap:1795625130.437680
columnisap:4982316080.424042
embodimentisap:5030947640.420929
epromisap:2003175640.417640
memory elementisap:803475280.414303
antifuseisap:3817796180.413330
present inventionisap:1510651390.405729
other wordisap:1754305610.398108
threshold voltageisap:769310630.392671
charge storage elementisap:803475510.376716
memory arrayisap:2044084520.375605
flashisap:2014185450.366790
fig 2isap:2521180290.363227
mramisap:1701602140.352874
programmingisap:3558005580.343702
memoryisap:4966662740.343612
deviceisap:4897710710.342247
fig 12isap:2521180690.322051
variableisap:3781294080.320644
meansisap:2032218420.318418
fig 6isap:2521180430.316755
flip-flopisap:1513901370.316206
datumisap:2012391650.304699
chargeisap:4921979480.301672
detectionisap:1503058430.299265
lineisap:1663958920.297977
resistorisap:3839762890.289172
erasingisap:761243150.286537
dramisap:1760390330.282896
diodeisap:1962169870.278194
oneisap:2519592960.278085
fig 1isap:2521180120.267878
fig 13isap:2521180520.265108
fig 3isap:2521180300.258697
storage deviceisap:4897710870.258619
howeverisap:723912050.257905
rowisap:2521318570.252815
circuitisap:704822100.244495
transistorisap:5035575260.230547
registerisap:3847367620.228363
capacitorisap:1477879770.224587
thereforeisap:1523223990.213075
ramisap:2466121480.202642
resultisap:4981098810.200149
referenceisap:1512424400.186413
thusisap:1664686510.180787
thenisap:1712881790.178755
readisap:1745053120.150196
operationisap:1494782180.143703
sequenceisap:3828705040.140308
voltisap:1662428720.133161
voltageisap:769310640.105999
semiconductorisap:1466193420.103313
bisap:2157937490.092153
isisap:3330093770.054394