Toggle navigation
Faceted Browser
Sparql Endpoint
Browse using
OpenLink Faceted Browser
OpenLink Structured Data Editor
LodLive Browser
LODmilla Browser
Formats
RDF (Quad):
N-Quads
TriG
CSV
RDF (Triple):
N-Triples
N3/Turtle
JSON
XML
CSV
OData:
Atom
JSON
Microdata:
JSON
HTML
Embedded:
JSON
Turtle
About:
memory cell
Premodifier: memoryHead noun: cell
Same concepts
http://dbpedia.org/resource/Memory_cell
Broader concepts
label
provenance
confidence
circuit element
isap:
3317673
0.854238
device
isap:
305103829
0.842206
element
isap:
3317650
0.802607
memory array
isap:
86865683
0.769082
semiconductor device
isap:
305103824
0.758016
semiconductor integrate circuit
isap:
41901006
0.756474
integrate circuit device
isap:
305104002
0.731233
integrate circuit
isap:
5629828
0.728570
electronic device
isap:
305103942
0.725298
memory cell array
isap:
86865681
0.699699
cell
isap:
171497480
0.695543
nonvolatile memory
isap:
305572122
0.682754
storage device
isap:
305103842
0.679369
storage circuit
isap:
5629865
0.669106
microelectronic device
isap:
305103998
0.661301
nand cell
isap:
171498080
0.659281
more memory cell
isap:
171499548
0.652732
non-volatile memory device
isap:
305103847
0.641804
embodiment
isap:
187810483
0.641677
word line
isap:
168901911
0.631784
integrated circuit
isap:
5629838
0.627968
circuit
isap:
5629829
0.613917
flash eeprom
isap:
300415276
0.612104
static random access memory
isap:
305572129
0.610612
type of memory cell
isap:
169841242
0.601474
nonvolatile memory cell
isap:
171497611
0.601308
application
isap:
419560693
0.589121
memory cell
isap:
171497284
0.581210
component
isap:
288455255
0.577732
non-volatile memory
isap:
305572124
0.576593
select word line
isap:
168902002
0.576526
control gate
isap:
169438148
0.574311
non-selected memory cell
isap:
171499780
0.572389
dummy memory cell
isap:
171499971
0.571602
memory array of fig
isap:
86865688
0.571081
unselected memory cell
isap:
171499654
0.569919
ferroelectric memory device
isap:
305103938
0.562308
portion
isap:
9289425
0.548065
flash eeprom memory cell
isap:
171498987
0.547588
defective memory cell
isap:
171499868
0.544434
charge trapping memory cell
isap:
171497959
0.542778
problem
isap:
7419834
0.540872
mtj
isap:
124813302
0.534497
semiconductor memory
isap:
305572125
0.527107
structure
isap:
286145168
0.518386
nonvolatile memory array
isap:
86865687
0.512760
vertical memory cell
isap:
171499634
0.511478
plurality of memory cell
isap:
287912730
0.502181
memory system
isap:
302521772
0.500939
peripheral circuit
isap:
5629833
0.500206
view of a portion
isap:
167422610
0.493645
flash memory cell
isap:
171497850
0.490563
non-volatile memory cell
isap:
171497768
0.489812
circuit diagram
isap:
11593435
0.479245
memory block
isap:
90119646
0.478402
logic
isap:
95247995
0.474691
unit
isap:
169661217
0.472464
power consumption
isap:
417610804
0.471170
means
isap:
90864639
0.467604
memory string
isap:
300375625
0.454030
manner
isap:
302307775
0.453826
type of t cell
isap:
169841317
0.453054
memory storage device
isap:
305103911
0.443635
consolidated device
isap:
305103868
0.434335
gate
isap:
169438145
0.429634
mo transistor
isap:
190014217
0.427701
memory device
isap:
305103819
0.427047
benefit
isap:
9297039
0.425589
sram cell
isap:
171498353
0.424409
dram cell
isap:
171498608
0.424105
storage
isap:
5586058
0.419581
datum
isap:
95313857
0.418150
electronic circuit
isap:
5629837
0.415327
area
isap:
171833958
0.407942
semiconductor memory device
isap:
305103827
0.403616
present invention
isap:
285783224
0.401308
memory
isap:
305572120
0.399585
page
isap:
170212818
0.397938
field effect transistor
isap:
190014220
0.392228
test mode
isap:
170466467
0.377259
line
isap:
168901927
0.371430
array
isap:
86865684
0.369302
diode
isap:
96341340
0.364323
transistor
isap:
190014215
0.343387
eeprom
isap:
300415274
0.340319
fig 1
isap:
124868623
0.329180
signal
isap:
304466662
0.326844
word
isap:
167526791
0.325937
method
isap:
304961181
0.320895
logic 1
isap:
95247994
0.320320
function
isap:
461496301
0.312281
plurality
isap:
287912737
0.312187
moreover
isap:
456118046
0.303572
however
isap:
6297474
0.303074
column
isap:
304900642
0.302903
sram
isap:
169958710
0.298354
other
isap:
86022152
0.298186
part
isap:
170213648
0.292184
drain region
isap:
302793992
0.288002
number
isap:
308161822
0.286808
threshold voltage
isap:
8129050
0.282243
type
isap:
169841355
0.279187
group
isap:
93057316
0.277749
example
isap:
10788446
0.273377
memory system of claim
isap:
302521942
0.270275
state
isap:
89817489
0.266381
line bl
isap:
515021671
0.260683
dram
isap:
169622473
0.260574
thus
isap:
169779857
0.254241
row
isap:
124796361
0.248914
internal circuit
isap:
5629868
0.245826
test pattern signal
isap:
304466671
0.239834
system
isap:
302521778
0.232468
operation
isap:
290077888
0.229522
advantage
isap:
290986591
0.226708
test pattern
isap:
8303772
0.206204
test datum
isap:
95313858
0.192758
information
isap:
416778144
0.192305
consequently
isap:
313740957
0.187850
test pulse
isap:
94704487
0.184856
voltage
isap:
8129048
0.160275
output
isap:
300809958
0.154596
use
isap:
124831092
0.143610
invention
isap:
285783227
0.127609
technique
isap:
289006433
0.119655
error
isap:
87495488
0.106594
process
isap:
7342427
0.104657
Narrower concepts
label
provenance
confidence
semiconductor memory
isap:
496666281
0.838493
phase change memory cell
isap:
171498663
0.809569
ferroelectric memory
isap:
496666292
0.773846
field effect transistor
isap:
503557529
0.760802
dram memory cell
isap:
171498102
0.756327
flash memory
isap:
496666275
0.753335
flash memory cell
isap:
171497739
0.752457
second memory cell
isap:
171498349
0.695410
random access memory
isap:
496666284
0.688245
memory cell m1
isap:
334305979
0.675741
storage element
isap:
80347539
0.673035
control gate
isap:
179562516
0.668386
memory cell 12
isap:
171498642
0.660412
bias arrangement
isap:
355747276
0.659737
memory device
isap:
489771076
0.657141
select memory cell
isap:
171497564
0.647926
fuse
isap:
168601786
0.647395
memory cell mc
isap:
332853091
0.640934
non-volatile memory cell
isap:
171498549
0.634650
word line
isap:
166395896
0.606156
dram cell
isap:
171499508
0.605193
cell
isap:
171497713
0.594038
thin film transistor
isap:
503557554
0.587437
memory cell
isap:
171497284
0.581210
read operation
isap:
149478221
0.580222
stack structure
isap:
149530367
0.559701
memory cell mc11
isap:
166273279
0.559162
sense amplifier
isap:
148014702
0.534603
memory cell array
isap:
204408453
0.520206
method
isap:
491679401
0.514199
t cell
isap:
171499726
0.504723
plurality of memory cell
isap:
149249988
0.497486
sram
isap:
167904733
0.478940
access memory dram cell
isap:
171499391
0.477854
eeprom
isap:
496382771
0.472753
configuration
isap:
146163881
0.459478
mo transistor
isap:
503557530
0.454619
gate
isap:
179562513
0.437680
column
isap:
498231608
0.424042
embodiment
isap:
503094764
0.420929
eprom
isap:
200317564
0.417640
memory element
isap:
80347528
0.414303
antifuse
isap:
381779618
0.413330
present invention
isap:
151065139
0.405729
other word
isap:
175430561
0.398108
threshold voltage
isap:
76931063
0.392671
charge storage element
isap:
80347551
0.376716
memory array
isap:
204408452
0.375605
flash
isap:
201418545
0.366790
fig 2
isap:
252118029
0.363227
mram
isap:
170160214
0.352874
programming
isap:
355800558
0.343702
memory
isap:
496666274
0.343612
device
isap:
489771071
0.342247
fig 12
isap:
252118069
0.322051
variable
isap:
378129408
0.320644
means
isap:
203221842
0.318418
fig 6
isap:
252118043
0.316755
flip-flop
isap:
151390137
0.316206
datum
isap:
201239165
0.304699
charge
isap:
492197948
0.301672
detection
isap:
150305843
0.299265
line
isap:
166395892
0.297977
resistor
isap:
383976289
0.289172
erasing
isap:
76124315
0.286537
dram
isap:
176039033
0.282896
diode
isap:
196216987
0.278194
one
isap:
251959296
0.278085
fig 1
isap:
252118012
0.267878
fig 13
isap:
252118052
0.265108
fig 3
isap:
252118030
0.258697
storage device
isap:
489771087
0.258619
however
isap:
72391205
0.257905
row
isap:
252131857
0.252815
circuit
isap:
70482210
0.244495
transistor
isap:
503557526
0.230547
register
isap:
384736762
0.228363
capacitor
isap:
147787977
0.224587
therefore
isap:
152322399
0.213075
ram
isap:
246612148
0.202642
result
isap:
498109881
0.200149
reference
isap:
151242440
0.186413
thus
isap:
166468651
0.180787
then
isap:
171288179
0.178755
read
isap:
174505312
0.150196
operation
isap:
149478218
0.143703
sequence
isap:
382870504
0.140308
volt
isap:
166242872
0.133161
voltage
isap:
76931064
0.105999
semiconductor
isap:
146619342
0.103313
b
isap:
215793749
0.092153
is
isap:
333009377
0.054394