Head noun: transistor

Same concepts
http://dbpedia.org/resource/Transistor

Broader concepts

labelprovenanceconfidence
electronic circuitisap:2192127940.779458
electronic circuit elementisap:2191032170.765829
solid state deviceisap:2536198180.722279
various applicationisap:3155135040.681733
discrete componentisap:1924911790.680209
non-linear circuit elementisap:2191032000.661867
functional elementisap:2191032020.661700
active componentisap:1924911780.659509
solid stateisap:4762986130.647262
electronic deviceisap:2536198070.645999
circuit elementisap:2191031920.641558
partisap:5048378290.638215
switching elementisap:2191031950.638047
passive deviceisap:2536198260.637657
electronic elementisap:2191032010.610858
electronic componentisap:1924911760.609387
organic electronic deviceisap:2536198460.608836
semiconductor switching elementisap:2191032330.603037
large number of elementisap:2556781660.594493
itemisap:5049964890.593480
solid state componentisap:1924912030.592490
electrical componentisap:1924911800.591874
revolutionary technologyisap:4007660230.591511
active electrical deviceisap:2536198960.589900
circuit deviceisap:2536198380.585057
discrete electronic componentisap:1924912010.583353
circuit componentisap:1924911810.582094
analog component utilize semiconductorisap:1924911860.579530
passive componentisap:1924911960.576197
active circuitryisap:1919816780.575111
semiconductor elementisap:2191031930.570439
solid-state deviceisap:2536198090.561803
semiconductor deviceisap:2536198060.560330
component of integrate circuitisap:1924911880.558906
power supplyisap:2552954590.549721
active circuit elementisap:2191032090.548047
electrical deviceisap:2536198200.545475
microelectronic deviceisap:2536198300.538986
integrate circuit deviceisap:2536198420.537305
active electronic deviceisap:2536198350.536488
basic circuit elementisap:2191032840.535915
basic electronic componentisap:1924911890.535791
active electronic componentisap:1924911840.534948
component of the circuitisap:1924912430.530350
component in the icisap:1924912640.528435
electronic partisap:5048378300.527466
active elementisap:2191031940.527257
individual semiconductor deviceisap:2536200630.526112
elementisap:2191031910.526089
other electronic componentisap:1924911870.521677
control elementisap:2191032390.520585
active semiconductor deviceisap:2536198740.519026
other electrical componentisap:1924912600.518150
semiconductor circuit elementisap:2191032160.517142
semiconductor componentisap:1924911820.516491
active circuit componentisap:1924912830.514942
deviceisap:2536198050.511687
active deviceisap:2536198080.511106
simple electronic componentisap:1924912310.506751
active areaisap:5035143110.501765
semiconductor structureisap:1934261410.501279
discrete deviceisap:2536198390.499606
nonlinear circuit elementisap:2191032560.497634
various semiconductor deviceisap:2536199410.496288
analog switchisap:2563227460.495524
first switching deviceisap:2536201240.492519
type of electronic componentisap:5045590060.492481
plurality of transistorisap:1918686830.492150
arrangementisap:3157642810.489239
electrical elementisap:2191032180.487846
microelectronic componentisap:1924912080.487121
electrical circuit elementisap:2191032110.485951
component of a icisap:1924912540.485683
device on the waferisap:2536201260.484878
optoelectronic deviceisap:2536198440.482618
simple componentisap:1924912520.478154
driver circuitisap:2192128050.477726
passive circuit componentisap:1924912220.475463
electronics componentisap:1924912290.474746
individual componentisap:1924912060.473524
integrate componentisap:1924911970.473449
integrate circuitisap:2192127930.471188
nanoelectronic deviceisap:2536198910.470013
integrate circuit componentisap:1924912050.469938
semiconductor circuitisap:2192128720.469826
microwave componentisap:1924912240.467985
solid state semiconductor deviceisap:2536199050.463702
semiconductorisap:5030101570.463608
active structureisap:1934261460.461441
integrate semiconductor deviceisap:2536199840.461307
passive elementisap:2191032050.461214
common elementisap:2191032670.460221
many different typeisap:5045590300.459682
device componentisap:1924911940.459075
thingisap:4733624030.458017
type of switching elementisap:5045590510.455883
surface of the semiconductorisap:2171658190.454650
electronic switchisap:2563227380.454074
productisap:2186224180.453629
semiconductor productisap:2186224200.452178
integrated circuitsisap:2846335390.450529
resistive elementisap:2191032140.449460
semiconductor materialisap:2825264720.448976
external deviceisap:2536199870.448019
logic circuitisap:2192128020.447867
power componentisap:1924912580.447477
semiconductor chipisap:5035492100.445667
structureisap:1934261400.445217
peripheral circuitisap:2192128220.443693
new technologyisap:4007660170.443137
nonlinear deviceisap:2536198250.442368
individual elementisap:2191032250.442083
mo transistorisap:4004473700.439775
switching deviceisap:2536198110.438050
desire circuit patternisap:2189714780.435458
other componentisap:1924911850.434789
display apparatusisap:1926382240.433777
optical deviceisap:2536198660.433706
second capacitorisap:1918107110.429121
nonlinear elementisap:2191032100.428827
element not shownisap:2191032350.427748
second transistorisap:4004474390.426128
solid state switchisap:2563227550.424876
switching unitisap:5042849200.423879
second switchisap:2563227500.423474
power transistorisap:4004476150.422411
integrate deviceisap:2536198810.422342
field effect transistorisap:4004473630.422044
non-linear elementisap:2191032040.422010
display panelisap:4743647870.418777
switching circuitisap:2192128070.418621
chip componentisap:1924912230.417982
type of semiconductor deviceisap:5045589970.417721
individual deviceisap:2536198370.417645
metal oxide semiconductor moisap:2786287020.416215
circuit partisap:5048378360.415133
drive circuitisap:2192128090.413699
non-linear deviceisap:2536198360.411874
electrodeisap:1936643330.411346
combination of circuit elementisap:3148084520.410622
such deviceisap:2536198800.409687
active regionisap:2569028500.409282
device with three terminalisap:2536201020.403660
variety of componentisap:2201084460.403498
plurality of deviceisap:1918686800.402122
output driverisap:2559187290.399990
variety of deviceisap:2201084430.398661
semiconductor waferisap:4743469970.398404
power sourceisap:2539955890.397615
various electronic componentisap:1924911910.396509
electrical partisap:5048378340.396007
applicationisap:3155135020.394031
other transistorisap:4004474420.393397
semiconductor switching deviceisap:2536198750.393063
suitable switchisap:2563227430.390757
switching meansisap:4741882710.389996
logic elementisap:2191032220.387950
manufacturing methodisap:2563460660.387631
semiconductor switchisap:2563227410.387301
formation of deviceisap:1923520380.380723
word lineisap:5047589580.380406
current pathisap:5048376070.377140
similar deviceisap:2536200400.372996
active partisap:5048378350.368767
field effect transistor fetisap:4021139980.368600
transistorisap:4004473620.362652
active loadisap:5047493770.361216
surfaceisap:2171658180.361195
many applicationisap:3155135030.355103
chipisap:5035492070.354382
stable oscillatorisap:4005017760.353567
three-terminal deviceisap:2536198520.352689
important inventionisap:1924335670.352216
limited toisap:2786291640.351156
different componentisap:1924912260.350720
bi-polar deviceisap:2536200590.348396
terminal deviceisap:2536198600.343833
individual semiconductorisap:5030101770.343692
small deviceisap:2536198770.342565
electric elementisap:2191032790.340037
microprocessorisap:411191320.340001
amountisap:2565800890.337118
objectisap:2572818530.336841
voltageisap:2195160420.334401
related productisap:2186224210.333479
know solid state deviceisap:2536201380.331111
technologyisap:4007660160.331056
simple switchisap:2563227480.330308
inventionisap:1924335560.329435
electron deviceisap:2536198550.329227
voltage regulatorisap:1932378680.327449
switch circuitisap:2192128540.327341
micro-componentisap:2788004270.324478
semi-conductor deviceisap:2536199220.323814
componentisap:1924911750.322921
analog deviceisap:2536201190.322735
building blockisap:4753784850.322612
3-terminal deviceisap:2536198870.321559
miniaturize semiconductor deviceisap:2536199900.321440
off stateisap:4762986170.319722
other deviceisap:2536198220.319447
p-channel deviceisap:2536198940.318996
state deviceisap:2536199850.318037
digital deviceisap:2536200700.316283
not shownisap:4759407850.316133
semiconductor substrateisap:1931952110.316065
semi-conductorisap:411722840.316012
physical systemisap:2549605740.314777
npn typeisap:5045590340.312861
lineisap:5047589550.311376
integrate circuit designisap:2535371610.310912
tiny deviceisap:2536199110.310786
gameisap:5033515900.310509
passiveisap:2207054580.308719
action gameisap:5033515920.308443
other embodimentisap:4002120330.308350
first transistorisap:4004473960.308298
electrical pathisap:5048376090.306978
circuitryisap:1919816770.304926
fig 2isap:4021135030.304669
power reductionisap:1931734920.303747
several componentisap:1924912810.302108
innovationisap:3997540400.301222
electronic switchingisap:1930786040.299933
reset transistorisap:4004474550.299620
electrical switchisap:2563227510.298117
bufferisap:2574923660.295559
various componentisap:1924912280.295150
various electrical deviceisap:2536198780.294819
layerisap:4759755120.294688
electronicsisap:3159353360.294376
enhancement mode transistorisap:4004474230.294270
advantageisap:1936162440.293569
first switchisap:2563227630.292206
operational amplifierisap:1938310410.292141
big dealisap:5030802830.291811
typeisap:5045589870.291128
isolation deviceisap:2536198580.290888
n-type transistorisap:4004473890.289654
gate bipolar transistor igbtisap:5033505910.288634
n-channel mo transistorisap:4004474210.288578
high voltage transistorisap:4004474990.287778
various circuit elementisap:2191032230.287615
active storage elementisap:2191033250.286380
other handisap:5050206570.285273
discrete semiconductor componentisap:1924912550.284597
method for manufacture semiconductorisap:2563460760.281999
processisap:2187058630.281126
production of semiconductor deviceisap:3996233940.279622
switching componentisap:1924912210.279233
valueisap:4763182970.278703
semiconductor manufacturing processisap:2187058670.278619
transistor radioisap:4732727290.278324
signalisap:2542485030.278275
solid state typeisap:5045590260.277831
configurationisap:5027996220.276438
needisap:5047215830.276360
example of a semiconductorisap:2171388310.272111
amplifierisap:1938310400.271811
wiringisap:2543882560.270738
constructionisap:234341450.270690
emitter-followerisap:4012213530.270267
whole circuitisap:2192128360.269602
sensorisap:2571479270.267084
processorisap:1917361060.267051
pointisap:4751819750.265730
spaceisap:4765017980.264477
bipolar transistorisap:4004473680.263813
type of deviceisap:5045590350.262370
bias voltageisap:2195160570.262319
reference potentialisap:1923102370.262301
resistanceisap:3993401650.261488
modern technologyisap:4007660250.261276
electronics deviceisap:2536199230.259829
factorisap:2542040910.259117
part of electronic deviceisap:5048378320.258523
alternative embodimentisap:4002120380.257941
n-channel transistorisap:4004473710.257533
digital circuitisap:2192128100.254883
tftisap:4021368020.254770
functionisap:2840718490.254431
comparatorisap:3992097020.254034
important partisap:5048378370.253612
fabrication of semiconductor deviceisap:3147683600.252935
nanodeviceisap:3996571230.252820
test structureisap:1934261550.252066
pmo transistorisap:4004473650.250262
semiconductor apparatusisap:1926382270.248883
metal oxide semiconductor cmoisap:4021169690.248480
p-channel transistorisap:4004473750.246759
inverterisap:2836550990.246668
nmo transistorisap:4004473690.246480
techniqueisap:1920815680.245380
operationisap:1929649970.243504
function of the switchisap:2840718510.243005
pnp transistorisap:4004473860.241767
output voltageisap:2195160510.240988
developmentisap:3154332520.240899
p-mo transistorisap:4004475050.240822
nmos transistorisap:4004475360.240543
diagramisap:2201714820.239909
manufacturing processisap:2187058650.237940
size of transistorisap:5046578330.237278
dramisap:5031687140.235978
simple circuitisap:2192128400.235891
unitisap:5042849170.235523
areaisap:5035143130.235177
gateisap:5033505820.234582
bell labsisap:5050987510.233934
assemblyisap:2846173580.233590
featureisap:2171793850.232955
exampleisap:2171388240.232871
mos transistorisap:4004474960.232838
memory cellisap:5035575260.230547
field-effect transistor fetisap:4021140030.230461
particularisap:3997037630.229275
analogisap:2534711350.226258
driverisap:2559187280.225895
meansisap:4741882700.225224
control circuitisap:2192128030.224851
embodimentisap:4002120340.224471
seriesisap:2571781250.223899
outputisap:2567010280.223327
columnisap:2564140270.221668
skill in the artisap:4757684870.221071
memory deviceisap:2536198980.220433
field-effect transistorisap:4004473910.220189
wireisap:5043983350.218652
changeisap:2561633780.217453
transformerisap:3150913790.217307
high speedisap:4764927960.216877
background of the inventionisap:4002842720.215909
supply voltageisap:2195160450.215397
second regionisap:2569028560.215346
mechanismisap:1926091960.214667
semiconductor memoryisap:2566454990.214377
resultisap:2534612730.214056
valveisap:4763182210.212805
conductorisap:1918479910.212772
capacitorisap:1918107080.211748
loadisap:5047493780.211569
stateisap:4762986140.210201
integrated circuitisap:2192128510.209931
aspect of the inventionisap:2551095040.208313
transfer transistorisap:4004474720.206481
intelisap:4732385030.206260
researchisap:2823846730.206085
materialisap:2825264710.205657
fabrication processisap:2187058660.204189
defectisap:2549049880.204005
styleisap:4762411670.203798
semiconductor layerisap:4759755250.202563
batteryisap:2186702550.202557
groundisap:2563385710.202512
terminalisap:2839110950.201921
mannerisap:2560939000.201033
current mirrorisap:2540485560.200784
portionisap:2169558630.200357
switchingisap:1930786010.200357
above mentionedisap:1930644940.198166
inductorisap:2846612350.196883
coatingisap:2175860000.196437
high voltageisap:2195160440.194856
workisap:5044107960.190968
output terminalisap:2839110930.189993
resistorisap:2848648560.189374
collector electrodeisap:1936643410.189066
circuitisap:2192127920.188746
devicesisap:2178251400.188559
systemisap:2549605730.187507
breakthroughisap:233030070.186404
memoryisap:2566454980.186155
igbtisap:5049554490.185409
test circuitisap:2192128770.184633
artisap:4021191580.183846
threshold voltageisap:2195160430.182686
sourceisap:2539955870.182031
timeisap:5045924400.179770
bipolar junction transistor bjtisap:4021175670.179321
reasonisap:2567105710.177621
flowisap:5032111200.176376
switchisap:2563227370.175442
present inventionisap:1924335570.174526
cellisap:5035575270.172669
combinationisap:3148084500.172630
base regionisap:2569028650.171618
p-channel mosfetisap:2564209440.171127
fluidisap:4742864340.169933
different configurationisap:5027996210.169779
effectisap:2543828090.169316
vacuum tubeisap:5045836090.168208
workingisap:2196861700.167389
stepisap:5046461280.167139
furtherisap:2190966550.166982
thereforeisap:1933238430.165779
channelisap:2201333190.165034
regionisap:2569028490.164492
computerisap:2852768880.163915
n typeisap:5045590170.163245
relayisap:4743688810.163221
n-channel mosfetisap:2564209460.163166
substrateisap:1931952100.163109
other type of switchingisap:5045590430.162796
other processisap:2187058680.162678
semiconductor device fabricationisap:3147683620.162388
signal voltageisap:2195160560.161292
dielectric materialisap:2825264760.161184
controlisap:2181059850.159975
logicisap:4748687430.159173
rectifierisap:1933862150.158520
enhancement mode mosfetisap:2564209470.157866
industryisap:2831478100.157629
implementationisap:408989230.157105
connectionisap:3993392200.155987
formationisap:1923520370.155555
receiverisap:2843813460.155523
nodeisap:5048734840.154449
oscillatorisap:4005017770.154195
preferred embodimentisap:4002120460.154040
aisap:409795030.153705
basicsisap:2566326320.152364
arrayisap:4730556570.152154
pnp typeisap:5045590110.150909
p-channel typeisap:5045590070.150684
nanotechnologyisap:410360300.149832
icisap:2786283020.149770
methodisap:2563460640.147906
likeisap:5047620840.146210
eisap:409791240.145879
pluralityisap:1918686780.145200
purposeisap:2175183000.144855
diodeisap:4760113090.144444
waferisap:4743469930.142915
fig 1isap:4021135000.139756
fetisap:4021140000.137895
alternativelyisap:5030094150.134928
varietyisap:2201084400.133645
smallisap:4757370800.132227
furthermoreisap:3154900220.132095
emitterisap:2188986880.132092
accordinglyisap:3149747070.131789
characteristicisap:409839180.131760
problemisap:2187279120.131710
performanceisap:3155234290.131404
nmoisap:4021234100.131107
referenceisap:1927936900.129097
gate voltageisap:2195160600.128837
howeverisap:2185543160.128808
optionisap:2566473100.128736
useisap:4021349070.128721
mesfetisap:2562795690.128678
bisap:409794670.128385
misfetisap:2540225170.128225
sisap:409791840.127733
typicallyisap:1919661300.127474
henceisap:4747058510.127345
baseisap:5034951530.127340
mosfetisap:2564209430.127335
electricityisap:3156708980.126311
anythingisap:2847672380.126032
visap:409793430.125589
maskisap:5047783590.124939
pixelisap:4738852950.124880
similarlyisap:1921320680.124440
modelisap:4744312280.123388
shortisap:4759409550.122793
thousandisap:2846155160.122528
respectivelyisap:231807380.122004
inputisap:4732451930.121868
bodyisap:5036016620.121720
pmoisap:4021384260.121183
powerisap:4751498120.120350
finallyisap:2200833460.119535
thoughisap:2571888990.119255
jfetisap:5051528870.119145
p-channelisap:1935669680.118776
distortionisap:4001598620.118376
n-channelisap:1933761950.117968
operating pointisap:4751819770.117783
ponentisap:2541357110.117658
pisap:409791430.115900
thereisap:4733572570.114779
germaniumisap:1934183540.112517
abilityisap:2196859450.111593
currentisap:2187954770.111078
goalisap:5032864060.110942
todayisap:4741066190.108978
tubeisap:5045836100.108585
setisap:4021356240.107033
npnisap:4021241970.105971
depletionisap:1935166270.105159
manufactureisap:3157020930.101791
modeisap:5046953810.100024
nfetisap:5047398910.099195
thusisap:5045915760.098707
pnpisap:4021385900.096743
additionisap:2840632230.096309
figureisap:2541036050.095704
sameisap:5046758040.095134
s2isap:2786290640.092646
collectorisap:1928846910.091620
drainisap:4754718230.091266
alsoisap:5035214530.090937
legisap:4021258170.090020
nothingisap:2188335400.089910
equipmentisap:1930545570.088687
cisap:409794860.084155
additionallyisap:231122940.083850
numberisap:2556781540.082021
testisap:5046097890.077703
positionisap:2849706770.076541
caseisap:5035645990.073430
polarityisap:2846236080.071686
failureisap:2170197490.070957
soundisap:4765132880.050003

Narrower concepts

labelprovenanceconfidence
field effect transistor fetisap:2388505840.669898
v-groove transistorisap:4004475010.660493
thin film transistorisap:4004473880.651400
access transistorisap:4004473920.638276
fet field effect transistorisap:4004474760.628681
nmo transistorisap:4004473940.626258
pass transistorisap:4004473990.606406
threshold voltageisap:2451061490.588860
npn transistorisap:4004474290.578059
oxide semiconductorisap:291861180.568035
emitter followerisap:1819593430.563563
mosfetisap:212526290.560342
bipolar transistorisap:4004473660.559275
fourth transistorisap:4004474060.553814
first transistorisap:4004473740.552938
p-type transistorisap:4004474860.552395
third transistorisap:4004474020.549232
fifth transistorisap:4004476070.547208
drive transistorisap:4004476170.547208
carbon nanotubeisap:1798413860.546699
light-emitting deviceisap:181611150.538138
light-emitting diodeisap:2587424760.534327
field effect transistorisap:4004473640.526674
nmo transistor m1isap:2651648090.522142
transistor arrayisap:2601594710.517124
fig 1isap:2377548800.516821
organic semiconductorisap:291861220.515163
cmo transistorisap:4004475400.514193
memory circuitisap:2452078510.505360
mos transistorisap:4004474000.502780
transistor q1isap:2655985180.500253
transistor connect in seriesisap:4004474580.495013
switching elementisap:2423281640.494459
reset transistorisap:4004476690.492550
solar cellisap:1900142190.489029
transfer transistorisap:4004475160.484640
transistor 54isap:4004475970.473588
transistor t1isap:2651794450.467527
second transistorisap:4004473950.459817
collector electrodeisap:434070840.459579
recessed channelisap:2438221400.457707
current sourceisap:175984550.457030
power mosfetisap:212526320.444826
active elementisap:2423281720.439013
word lineisap:1880309200.436552
bipolar junction transistorisap:4004474260.434774
thin-film transistorisap:4004473820.432245
field-effect transistor fetisap:2388505860.430715
capacitorisap:422690720.428475
drain regionisap:181269250.428453
transistor 206isap:4004476610.427412
thin filmisap:1878162060.426229
gate terminalisap:1813615630.425052
fig 3isap:2377548810.422386
target transistorisap:4004474920.421446
field-effect transistorisap:4004473670.420426
transistor 10isap:4004474780.399231
output stageisap:2581019000.390763
mo transistorisap:4004475110.378894
transistor 105isap:4004475570.376973
transistor have gateisap:4004474480.363500
transistorisap:4004473620.362652
n-channel transistorisap:4004476440.360267
present inventionisap:419536330.354641
semiconductor deviceisap:181610570.351783
nanotubeisap:1798413870.350268
fieldisap:2586775140.345820
gate regionisap:181269560.344560
memory cellisap:1900142150.343387
sourceisap:175984530.335635
transistor 301isap:4004475500.330372
pmo transistorisap:4004474910.330069
transistor 32isap:4004475550.325399
gate dielectricisap:4004912290.323790
diodeisap:2587424690.317772
other handisap:1883854130.314567
memory deviceisap:181610620.311108
read operationisap:439204730.305457
integrate circuitisap:2452078410.300788
transistor 31isap:4004474370.295852
q7isap:2654336150.291683
collector regionisap:181269550.291528
pnp bipolar transistorisap:2393082260.284816
furtherisap:2422328060.284584
drainisap:2596360120.283568
fetisap:2388505830.281370
metal oxide semiconductor fieldisap:2586775110.280778
building blockisap:2611954310.280623
amplifierisap:433110390.276215
circuit elementisap:2423281660.273923
multiplierisap:4007184040.273661
control deviceisap:181611090.269399
semiconductor materialisap:1814587370.268701
tftisap:2373680730.267037
hbtisap:2379135880.266197
q1isap:2655985160.263421
power transistorisap:4004473870.258708
embodimentisap:4008416650.257853
thyristorisap:425588420.257441
n-channelisap:426399930.257334
uniformity extend portionisap:3997369690.255370
bjtisap:2392234130.254957
switching circuitisap:2452078500.253919
firstisap:2586117550.250688
leakage currentisap:2456455220.243110
wellisap:1900686620.242511
cmo inverterisap:1823173240.240259
instanceisap:1824459390.237599
q2isap:2652700320.232422
capacitanceisap:3129989420.229597
semiconductorisap:291861210.228686
germaniumisap:433727390.228603
alternative embodimentisap:4008416780.228198
wireisap:1892853140.227668
caseisap:1895721720.225471
mesfetisap:211349480.223290
portionisap:2447914480.222331
oscillatorisap:4003489220.221460
trenchisap:183753450.221333
finfetisap:175320050.220623
q16isap:2375693830.220149
gateisap:1913581920.218637
bodyisap:1880450510.216972
switchingisap:429738010.216676
emitterisap:2448500720.216003
mobilityisap:1817377630.212583
pixelisap:2610637080.212237
electrodeisap:434070830.211523
layerisap:2586210920.209808
t1isap:2651794420.206623
pmosisap:1887190720.206575
thereisap:2587010320.206035
icisap:2651909680.205522
region of the semiconductorisap:181269590.202713
bc548isap:2580668620.202290
ledisap:2375464290.198644
fig 5isap:2377548920.197662
loadisap:1905653230.197358
triacisap:2611964370.196605
meansisap:2591942410.196117
voltageisap:2451061480.193384
siliconisap:2452604440.190724
terminalisap:1813615650.189922
t2isap:2655999050.185970
collectorisap:433407010.183824
problemisap:2452629780.183075
thereforeisap:427387720.182904
controlisap:2432263670.180991
structureisap:421229180.180672
embodiment of the inventionisap:4008416700.174432
cpuisap:2376173290.174028
exampleisap:2430827940.173588
cacheisap:2606218970.171778
relayisap:2586359550.169802
q3isap:2650508120.167681
igbtisap:1884485980.167261
electronic componentisap:419498170.165822
stateisap:2597071440.164088
microprocessorisap:3284091240.163095
resistorisap:1804188450.162776
partisap:1891074740.158145
quarterisap:2441491520.157537
unitisap:1911320880.156327
circuitisap:2452078400.152421
circuit configurationisap:292221950.151764
typeisap:1889584590.149662
channelisap:2438221350.149368
chipisap:1913087850.145423
junctionisap:1808868890.145043
materialisap:1814587360.142404
numberisap:191053500.140590
pluralityisap:424366370.139987
fet'isap:1908452960.135758
inventionisap:419536350.133280
substrateisap:432612040.130508
memoryisap:197491560.129241
degradationisap:3125218650.128439
hereisap:1900425290.128024
displayisap:2430354120.127708
resistanceisap:4008390660.127598
seriesisap:175447040.127280
deviceisap:181610560.126650
bisap:3281215230.126497
sameisap:1892501490.125657
outputisap:193164330.119554
kisap:3280354680.118307
drawingisap:2427125960.116289
regionisap:181269280.105877
moreoverisap:1812420480.105598
etcisap:2383063750.104018
elementisap:2423281630.100148
someoneisap:2431711060.095240
oneisap:2383887780.094990
nameisap:1899973890.094725
timeisap:1899710680.094176
datumisap:2586827750.093355
likeisap:1890964270.092685
thingisap:2588030010.091987
switchisap:178599280.091837
logicisap:2606003170.091761
respectisap:2452105610.091080
methodisap:175159460.091055
nmoisap:2379064570.081765
howeverisap:2439720530.078551
sumisap:2387498040.076712
useisap:2379544650.075497
batteryisap:2425310400.071265
npnisap:2380740120.066371
nisap:3283195910.065000
flowisap:1907026310.062957
designisap:212641340.062264
pnpisap:2393082240.061638
packageisap:2429035560.058141
componentisap:419498160.057250
analogisap:191808120.056777
signalisap:215305840.051615