Head noun: tft

Same concepts
http://dbpedia.org/resource/TFT

Broader concepts

labelprovenanceconfidence
semiconductor deviceisap:2103199930.747821
thin film semiconductor deviceisap:2103200010.653940
thin film deviceisap:2103199950.653307
deviceisap:2103199940.567425
thin film integrate circuitisap:2497275270.549675
switching elementisap:2350756080.530698
liquid crystal display deviceisap:2103200140.524797
various semiconductor elementisap:2350756180.492549
elementisap:2350756070.470585
thin-film semiconductor deviceisap:2103200220.455022
switching element qisap:2648550120.436771
circuitisap:2322744410.408846
tftisap:2803755260.397622
active matrixisap:2140937230.394133
circuit componentisap:2625714020.390780
semiconductor elementisap:2350756100.387996
pixel regionisap:2109600280.383741
matrix liquid crystal displayisap:2140937240.383291
liquid crystal displayisap:2367534030.376307
electrical componentisap:2625714030.374712
first substrateisap:2625213440.373887
electronic componentisap:2625714010.366762
electronic deviceisap:2103200030.365707
display deviceisap:2103199980.364905
thin film transistorisap:2373680750.351887
switching deviceisap:2103199970.346512
field-effect transistorisap:2373680760.340830
field effect transistor fetisap:2802297810.315852
componentisap:2625713980.310015
kind of tftisap:2507246660.309767
field effect transistorisap:2373680740.290972
problemisap:2346341560.284927
single deviceisap:2103200130.271801
glass substrateisap:2625213420.267630
transistorisap:2373680730.267037
displayisap:2367533960.264676
n-channel tftisap:2803755270.258501
matrix formisap:2497134110.254057
passive deviceisap:2103200230.249838
methodisap:2131898110.237963
switch deviceisap:2103200170.234247
partisap:2510342450.218502
tvisap:4162082310.215789
pixelisap:4660529500.207217
alternativelyisap:2784678570.204721
additionisap:3295352220.201548
bottom-gate tftisap:2803755430.200772
circuitryisap:2617621570.199127
p-channel tftisap:2803755290.198420
present exampleisap:2336802400.197037
informationisap:1110399530.196189
top-gate tftisap:2803755720.195335
transparent electrodeisap:2628359510.194858
typeisap:2513957880.192591
type of active matrixisap:2513957810.190755
processisap:2348718220.190115
technologyisap:2382141290.188973
switchingisap:2626434160.188571
panelisap:4668723860.183855
preferablyisap:2388179370.183102
active matrix lcdisap:2804112150.181950
channel formation regionisap:2109600270.181837
layerisap:4675356770.181171
switchisap:2093633120.179192
anodeisap:4703004880.174811
furtherisap:2362357640.174381
leak currentisap:2327656900.173961
exampleisap:2336802380.172229
capacitorisap:2635700840.170477
semiconductorisap:2783160560.170077
portionisap:2357687290.166578
componentsisap:2386219550.160598
moreoverisap:3313172010.158714
variationisap:2626123530.158669
present inventionisap:2635514870.153807
filmisap:2497275340.152615
integrate circuitisap:2322744420.152350
lcdisap:2804112130.146448
amorphous silicon tftisap:2803755650.145808
isolationisap:2623865510.144944
structureisap:2615446630.143600
substrateisap:2625213380.138053
mannerisap:2135370850.136164
fetisap:2802297800.115460
inventionisap:2635514880.114771
thereforeisap:2640641620.114363
channel regionisap:2109600300.103120
driverisap:2132239860.100939
resultisap:2099509420.100852
thingisap:4699537850.096544
channelisap:2316969500.096466
n-channelisap:2636194440.087076
embodimentisap:2373120900.075685
howeverisap:2368026170.073244